Review of semiconductor flash memory devices for material and process issues

SS Kim, SK Yong, W Kim, S Kang, HW Park… - Advanced …, 2023 - Wiley Online Library
Abstract Vertically integrated NAND (V‐NAND) flash memory is the main data storage in
modern handheld electronic devices, widening its share even in the data centers where …

Neuromemristive circuits for edge computing: A review

O Krestinskaya, AP James… - IEEE transactions on …, 2019 - ieeexplore.ieee.org
The volume, veracity, variability, and velocity of data produced from the ever increasing
network of sensors connected to Internet pose challenges for power management …

Memristor-based binarized spiking neural networks: Challenges and applications

JK Eshraghian, X Wang, WD Lu - IEEE Nanotechnology …, 2022 - ieeexplore.ieee.org
Memristive arrays are a natural fit to implement spiking neural network (SNN) acceleration.
Representing information as digital spiking events can improve noise margins and tolerance …

Advances in emerging memory technologies: From data storage to artificial intelligence

G Molas, E Nowak - Applied Sciences, 2021 - mdpi.com
This paper presents an overview of emerging memory technologies. It begins with the
presentation of stand-alone and embedded memory technology evolution, since the …

Understanding the idiosyncrasies of real persistent memory

S Gugnani, A Kashyap, X Lu - Proceedings of the VLDB Endowment, 2020 - dl.acm.org
High capacity persistent memory (PMEM) is finally commercially available in the form of
Intel's Optane DC Persistent Memory Module (DCPMM). Researchers have raced to …

Forms: Fine-grained polarized reram-based in-situ computation for mixed-signal dnn accelerator

G Yuan, P Behnam, Z Li, A Shafiee… - 2021 ACM/IEEE 48th …, 2021 - ieeexplore.ieee.org
Recent work demonstrated the promise of using resistive random access memory (ReRAM)
as an emerging technology to perform inherently parallel analog domain in-situ matrix …

Competing memristors for brain-inspired computing

SJ Kim, S Kim, HW Jang - Iscience, 2021 - cell.com
The expeditious development of information technology has led to the rise of artificial
intelligence (AI). However, conventional computing systems are prone to volatility, high …

Tailoring Mid‐Gap States of Chalcogenide Glass by Pressure‐Induced Hypervalent Bonding Towards the Design of Electrical Switching Materials

M Xu, Q Xu, R Gu, S Wang, CZ Wang… - Advanced Functional …, 2023 - Wiley Online Library
Phase change memory (PCM) and ovonic threshold switching (OTS) materials using
chalcogenide glass are essential elements in advanced 3D memory chips. The mid‐gap …

Phase change thin films for non-volatile memory applications

A Lotnyk, M Behrens, B Rauschenbach - Nanoscale Advances, 2019 - pubs.rsc.org
The rapid development of Internet of Things devices requires real time processing of a huge
amount of digital data, creating a new demand for computing technology. Phase change …

{INSIDER}: Designing {In-Storage} computing system for emerging {High-Performance} drive

Z Ruan, T He, J Cong - … Annual Technical Conference (USENIX ATC 19), 2019 - usenix.org
We present INSIDER, a full-stack redesigned storage system to help users fully utilize the
performance of emerging storage drives with moderate programming efforts. On the …