Gallium nitride (GaN) is one of the most technologically important semiconductors and a
fundamental component in many optoelectronic and power devices. Low-resistivity GaN …

With an increasing demand for THz electronics applications, it is essential to obtain the
electrical properties of semiconductor materials used in their fabrication. This study presents …

The paper presents a new instrument—a portable spectroscopic quasi-optical (QO) THz
ellipsometer-reflectometer (SQOTER). It combines two independent experimental …

The electrical properties of beta-gallium oxide (β-Ga 2 O 3) and gallium arsenide
semiconductors were characterized using the emerging terahertz time-domain ellipsometry …

Beta gallium oxide, β-Ga2O3, is one of the promising ultrawide bandgap semiconductors
with a monoclinic (C2/m) β-phase structure showing strong anisotropic properties. To …

Semiconductor evaluation methods frequently require sample processing and carry the risk
of defects and property changes. Therefore, nondestructive and noncontact electrical …

We demonstrate the measurement of electrical properties of InN layers grown by RF-MBE
using terahertz time-domain spectroscopic ellipsometry (THz-TDSE). Dependences of …

Through transmission electron microscopy and related techniques, we performed structural
evaluation of low-temperature grown (LTG) InGaAs crystals on (0 0 1) InP substrates. These …

Gallium nitride (GaN) single crystals with high carrier concentration up to 10 20 cm-3 order
were evaluated by the terahertz time-domain spectroscopic ellipsometry. The electric …

The resistivities of P+-implanted 4H-SiC samples, each prepared at different implantation
and annealing temperatures, were measured using terahertz time-domain spectroscopic …