With the continuous miniaturization of electronic devices and the upcoming new
technologies such as Artificial Intelligence (AI), Internet of Things (IoT), fifth-generation …

Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for
achieving high-density integration, high-speed connectivity, and for downsizing of electronic …

The concentration of additives of a copper electroplating bath with a complex matrix are
quantified using electrochemical impedance spectroscopy (EIS). The Experimental data …

Background Copper electroplating is an important technology used to construct the
interconnects/conductors in microelectronic industry. Functional additives such as …

Electroplating has been favored to date as a surface treatment technology in various
industries in the development of semiconductors, automobiles, ships, and steel due to its …

Abstract System-in-packaging (SiP) can realize the integration and miniaturization of
electronic devices and it is significant to continue Moore's law. Through-X-via (TXV) …

Through‐silicon via (TSV) technology realizes high‐density interconnections within and
between different dies (chips) by vertically drilling holes in silicon and filling them with …

Low thermal conductivity and large coefficient of thermal expansion (CTE) are the most
serious disadvantages of the polymer dielectric for the interposer redistribution layer (RDL) …

Ru deposition in advanced technology nodes can improve performance by providing low
resistance in nanoscale features. In this study, we reported the electrochemical reactions of …

In this study, by adding a single additive of Cetyltrimethyl Ammonium Bromide (CTAB) to the
electrolyte, the bottom-up filling of micro via (Φ20 μm× 200 μm) was obtained with a fast …