[HTML][HTML] Strain and lattice vibration mechanisms in GaN-AlxGa1-xN nanowire structures on Si substrate
In this work we use Raman scattering and X-ray diffraction (XRD) techniques to examine
strain and lattice vibration mechanisms in self-assembled GaN-Al x Ga 1-x N nanowire (NW) …
strain and lattice vibration mechanisms in self-assembled GaN-Al x Ga 1-x N nanowire (NW) …
Lasing mode manipulation in a Benz-shaped GaN cavity via the Joule effect of individual Ni wires
F Qin, X Ji, Y Yang, M Li, X Li, Y Lin, K Lu… - …, 2023 - iopscience.iop.org
Silicon-based gallium nitride lasers are considered potential laser sources for on-chip
integration. However, the capability of on-demand lasing output with its reversible and …
integration. However, the capability of on-demand lasing output with its reversible and …
Micro-and Nanotechnology of Wide-Bandgap Semiconductors
AB Piotrowska, E Kamińska, W Wojtasiak - Electronics, 2021 - mdpi.com
Gallium Nitride and Related Wide-Bandgap Semiconductors (WBS) have constantly
received a great amount of attention in recent years. The main reason behind it is that …
received a great amount of attention in recent years. The main reason behind it is that …
[PDF][PDF] Development of thick GaN and AlGaN drift layers for vertical power devices
A Dhora - 2023 - lup.lub.lu.se
High-quality, thick III-nitride epitaxial drift layers with controlled doping are needed for next-
generation highly efficient vertical power devices for a smart grid applications and …
generation highly efficient vertical power devices for a smart grid applications and …
Kami nska, E.; Wojtasiak, W. Micro-and Nanotechnology of Wide-Bandgap Semiconductors. Electronics 2021, 10, 507
AB Piotrowska - 2021 - search.proquest.com
Today, nitride-based devices are widely used in high-performing radars (mainly 3D AESA),
telecommunications (LTE-A, 5G), power electronic systems, light-emitting diodes and lasers …
telecommunications (LTE-A, 5G), power electronic systems, light-emitting diodes and lasers …