We have performed a detailed characterization study of electrochemically etched p-type
GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and …

We report on the fabrication of porous GaAs (100) using three different acids, H2SO4, HF,
and HCl, diluted in DMF based solutions. The mixture of H2SO4 with DMF showed the best …

Porous germanium (PGe) substrates have recently attracted significant attention for the
development of lightweight and flexible solar cells and optoelectronic devices. A reliable …

This paper reports two specific aspects of Si implantation in the molecular beam epitaxy
grown p-type GaSb epilayer, namely, the evolution of nanoporosity and doping …

In this paper, we present the results of structural and photoluminescence (PL) studies on
porous layers produced on a heavily p-doped (100) GaAs wafer by electrochemical anodic …

Elastic accommodation of heteroepitaxial layers beyond their critical thickness is crucial for
the reduction of misfit dislocations. One approach is to utilize substrate engineering in order …

In the last decade, zincblende structure III–V semiconductors have been increasingly utilized
for the realization of high-performance optoelectronic applications because of their tunable …

In this paper, we present the results of structural and room temperature photoluminescence
studies on porous GaAs (π-GaAs) capped with GaAs. The porous structure formation was …

In this paper, electrochemical anodization was used to fabricate porous layers on n-type
GaAs substrates with different orientations, ie,(511) A,(100) and (111) B, under the same …

Porous germanium (PGe) substrates have recently attracted significant attention for the
development of lightweight and flexible solar cells and optoelectronic devices. A reliable …