Photodetectors integrating substrates and semiconductor materials are increasingly
attractive for applications in optical communication, optical sensing, optical computing, and …

It is well known that the p-type AlGaN electron blocking layer (p-EBL) can block hole
injection for deep ultraviolet light-emitting diodes (DUV LEDs). The polarization induced …

We investigated the etching rate of the m-plane of AlGaN by wet etching with
tetramethylammonium hydroxide aqueous solutions (25 wt%, 85 C). After dry etching was …

The interface polarization effect of the electron blocking layer (EBL) hinders the hole
transmission efficiency, and the traditional EBL cannot effectively suppress the electron …

Deep-UV distributed Bragg reflectors (DBRs) operating at λ= 220–250 nm with reflectivity
close to unity were produced using epitaxial Al x Ga 1-x N/AlN superlattice structures grown …

A double-tapered AlGaN electron blocking layer (EBL) is proposed to apply in a deep
ultraviolet semiconductor laser diode. Compared with the inverse double-tapered EBL, the …

Using finite-difference time-domain method, the light extraction efficiency (LEE) of AlGaN-
based deep-ultraviolet light-emitting diodes (DUV LEDs) is investigated. Simulation results …

We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-
plane AlGaN multiple-quantum well (MQW) heterostructures grown on a sapphire substrate …

A 365 nm AlxGa1-xN-based ultraviolet light-emitting diodes (LEDs) with double Al
composition gradient last quantum barrier and hole supply layer structure has been studied …

The design of the active region structures, including the modifications of structures of the
quantum barrier (QB) and electron blocking layer (EBL), in the deep ultraviolet (DUV) AlGaN …