A well‐posed physics‐based compact model for a three‐terminal silicon–oxide–nitride–
oxide–silicon (SONOS) synaptic circuit element is presented for use by neuromorphic …

The size of the memory market is expected to continue to expand due to the digital
transformation triggered by the fourth industrial revolution. Among various types of memory …

A breakthrough in in‐memory computing technologies hinges on the development of
appropriate material platforms that can overcome their existing limitations, such as larger …

With gate length (Lg) and gate spacing length (Ls) shrinkage, the cell-to-cell z-interference
phenomenon is increasingly severe in 3D NAND charge-trap memory. It has become one of …

Flash memory has gradually become the dominant storage device in the consumer market
and data centers since the storage capacity increases and production costs decline …

For 3D NAND memory, with continuous word line (WL) pitch scaling, deteriorated WL
interference and the impact on triple-level cell (TLC) operation window are anticipated …

In contrast to conventional 2-dimensional (2D) NAND flash memory, in 3D NAND flash
memory, cell-to-cell interference stemming from parasitic capacitance between the word …

In this letter, the word line (WL) interference behavior in 3D NAND cell and the impact on
program sequence of 3D NAND array operation are discussed. The WL interference …

Increasing the bit density in 3D NAND flash memory involves reducing the pitch of ON
(Oxide-Nitride) molds in the Z-direction. However, this reduction drastically increases Z …

This paper presents an innovative approach to alleviate Z-interference in 3D NAND flash
memory by proposing an optimized confined nitride trap layer structure. Z-interference poses …