Image-rejection CMOS low-noise amplifier design optimization techniques
This paper reviews and analyzes two reported image-rejection (IR) low-noise amplifier
(LNA) design techniques based on CMOS technology, ie, the second-order active notch filer …
(LNA) design techniques based on CMOS technology, ie, the second-order active notch filer …
A noise optimization formulation for CMOS low-noise amplifiers with on-chip low-Q inductors
A noise optimization formulation for a CMOS low-noise amplifier (LNA) with on-chip low-Q
inductors is presented, which incorporates the series resistances of the on-chip low-Q …
inductors is presented, which incorporates the series resistances of the on-chip low-Q …
On nonlinearity and noise trade-off in a low power 2.45 GHz CMOS LNA-mixer design
AA Pabon, E Roa, W Van Noije - 2007 SBMO/IEEE MTT-S …, 2007 - ieeexplore.ieee.org
A detailed nonlinearity and noise analysis for a low noise amplifier and mixer design for 2.45
GHz Bluetooth applications is presented. As a result, the trade-off between noise, linearity …
GHz Bluetooth applications is presented. As a result, the trade-off between noise, linearity …
A novel low noise design method for CMOS L-degeneration cascoded LNA
SH Lee, YZ Juang, CF Chiu… - The 2004 IEEE Asia …, 2004 - ieeexplore.ieee.org
The noise optimization design of the CMOS LNA is important in a communication IC. The
conventional noise optimization method for L-degeneration cascoded LNA with noise mainly …
conventional noise optimization method for L-degeneration cascoded LNA with noise mainly …
Comparison of various 2.4 GHz LNA topologies
A Djugova, J Radic… - 6th Conference on Ph. D …, 2010 - ieeexplore.ieee.org
In this paper two 2.4 GHz low noise amplifier (LNA) configurations in austriamicrosystems
0.35 μm SiGe BiCMOS technology are presented. Drawbacks and advantages of amplifiers …
0.35 μm SiGe BiCMOS technology are presented. Drawbacks and advantages of amplifiers …
A merged RF CMOS LNA-Mixer design using geometric programming
S Chaparro, AA Pabón, E Roa… - Proceedings of the 22nd …, 2009 - dl.acm.org
This paper presents the design using geometric programming of a merged CMOS LNA-
Mixer cell, intended for bluetooth application at 2.45 GHz. A rigorous noise formulation …
Mixer cell, intended for bluetooth application at 2.45 GHz. A rigorous noise formulation …
Integração de blocos RF CMOS com indutores usando tecnologia Flip Chip.
A Anjos - 2012 - teses.usp.br
Neste trabalho foi feita uma ampla pesquisa sobre blocos de RF, VCOs e LNAs, que fazem
parte de transceptores. Esses blocos foram projetados utilizando um indutor externo com …
parte de transceptores. Esses blocos foram projetados utilizando um indutor externo com …
[PDF][PDF] An RF-CMOS LNA and Mixer Merged Design Strategy
AA Pabón, E Roa, W Van Noije - XIII Workshop Iberchip. CDROM, 2007 - 161.111.232.132
ABSTRACT Low Noise Amplifier and Mixer design considerations for 2.45 GHz Bluetooth
applications have been studied. A detailed noise analysis is presented. A design strategy for …
applications have been studied. A detailed noise analysis is presented. A design strategy for …
[PDF][PDF] Optimization of Gate–Source/Drain Underlap on 30 nm Gate Length FinFET Based LNA Using TCAD Simulations
KK Nagarajan, N Vinodhkumar… - WSEAS Transactions on …, 2012 - wseas.com
The effect of gate–drain/source underlap (Lun) on a narrow band LNA performance has
been studied, in 30 nm FinFET using device and mixed mode simulations. Studies are …
been studied, in 30 nm FinFET using device and mixed mode simulations. Studies are …
A 1.8 V/5.2 GHz WLAN CMOS RFIC receiver
This paper describes a low-cost 1.8 V/5.2 GHz monolithic Zero-IF receiver. All of the RF and
conversion receiver components, with the exception of the frequency synthesizer, have been …
conversion receiver components, with the exception of the frequency synthesizer, have been …