Ultraviolet-assisted low-thermal-budget-driven α-InGaZnO thin films for high-performance transistors and logic circuits

Y Zhang, G He, L Wang, W Wang, X Xu, W Liu - ACS nano, 2022 - ACS Publications
Developing a low-temperature fabrication strategy of an amorphous InGaZnO (α-IGZO)
channel layer is a prerequisite for high-performance oxide-based thin film transistor (TFT) …

Comparative study of atomic layer deposited indium-based oxide transistors with a Fermi energy level-engineered heterojunction structure channel through a cation …

MH Cho, CH Choi, JK Jeong - ACS Applied Materials & Interfaces, 2022 - ACS Publications
Amorphous indium–gallium–zinc oxide (a-IGZO) has become a standard channel ingredient
of switching/driving transistors in active-matrix organic light-emitting diode (AMOLED) …

Reliability issues of amorphous oxide semiconductor-based thin film transistors

Y Shen, M Zhang, S He, L Bian, J Liu, Z Chen… - Journal of Materials …, 2024 - pubs.rsc.org
Amorphous oxide semiconductors (AOSs) are non-crystalline compounds composed of
metal elements and oxygen elements, possessing distinctive electrical properties. Even in …

Roles of Oxygen interstitial defects in atomic-layer deposited InGaZnO thin films with controlling the cationic compositions and gate-stack processes for the devices …

SH Bae, JH Yang, YH Kim, YH Kwon… - … applied materials & …, 2022 - ACS Publications
Roles of oxygen interstitial defects located in the In–Ga–Zn-O (IGZO) thin films prepared by
atomic layer deposition were investigated with controlling the cationic compositions and …

Enhancement of electrical stability of metal oxide thin-film transistors against various stresses

Y Kim, C Kim - Journal of Materials Chemistry C, 2023 - pubs.rsc.org
Metal-oxide semiconductors are considered promising alternative materials in the field of flat
panel display industry due to their advantages, such as high mobility, transparency …

Solution-processed oxide TFT based on bilayer channels with graded oxygen vacancy

Z Wang, Y Shi, Z Zhang, Y Dong… - IEEE Electron Device …, 2023 - ieeexplore.ieee.org
In this study, thin film transistors (TFTs) based on metal oxide with a regulated channel
prepared by solution process were fabricated. The front channel was composed of indium …

Polyimide-doped indium–gallium–zinc oxide-based transparent and flexible phototransistor for visible light detection

KS Kim, MS Kim, J Chung, D Kim, IS Lee… - ACS Applied Materials …, 2022 - ACS Publications
We report a transparent and flexible polyimide (PI)-doped single-layer (PSL) phototransistor
for the detection of visible light. The PSL was deposited on a SiO2 gate insulator by a co …

Realization of Enhanced Long‐Term Visual Memory for Indium–Gallium–Zinc Oxide‐Based Optical Synaptic Transistor

D Kim, WK Min, HT Kim, J Chung… - Advanced Optical …, 2022 - Wiley Online Library
Amorphous indium–gallium–zinc oxide (IGZO)‐based optical synaptic transistor using
visible light as the signal that shows a clear difference between long‐term memory (LTM) …

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

L Liang, H Zhang, T Li, W Li, J Gao, H Zhang… - Advanced …, 2023 - Wiley Online Library
Amorphous oxide semiconductor thin‐film transistors (AOS TFTs) are ever‐increasingly
utilized in displays. However, to bring high mobility and excellent stability together is a …

[HTML][HTML] Suppression of the redox reaction between the IGZO surface and the reducing agent TMA using fluorine oxidizing agent treatment

Y Jang, J Lee, J Mok, J Park, SY Shin, SY Lee - RSC advances, 2023 - pubs.rsc.org
We propose that the post-deposition oxidation of the IGZO surface is essential for improving
the interface quality, with Al2O3 prepared by atomic layer deposition (ALD) employing a …