Design and temperature assessment of junctionless nanosheet FET for nanoscale applications
VB Sreenivasulu, V Narendar - Silicon, 2022 - Springer
Nanosheets are the revolutionary change to overcome the limitations of FinFET. In this
paper, the temperature dependence of 10 nm junctionless (JL) nanosheet FET performance …
paper, the temperature dependence of 10 nm junctionless (JL) nanosheet FET performance …
Performance evaluation of GAA nanosheet FET with varied geometrical and process parameters
NA Kumari, P Prithvi - Silicon, 2022 - Springer
Abstract Nanosheet Field Effect Transistor (NSFET) is a viable contender for future scaling in
sub-7-nm technology. This paper provides insights into the variations of DC FOMs for …
sub-7-nm technology. This paper provides insights into the variations of DC FOMs for …
Performance improvement of spacer engineered n-type SOI FinFET at 3-nm gate length
VB Sreenivasulu, V Narendar - AEU-International Journal of Electronics …, 2021 - Elsevier
In this paper, for the first time, we have investigated the DC and analog/RF performance
metrics of 3 nm gate length (LG) silicon-on-insulator (SOI) FinFET using Hf x Ti 1− x O 2 high …
metrics of 3 nm gate length (LG) silicon-on-insulator (SOI) FinFET using Hf x Ti 1− x O 2 high …
Device and circuit-level performance comparison of GAA nanosheet FET with varied geometrical parameters
NA Kumari, P Prithvi - Microelectronics Journal, 2022 - Elsevier
In this paper, DC and analog/RF figures of merit (FOMs) for different geometrical variations
of the Gate all around (GAA) Nanosheet FET (NSFET) are computationally examined. For …
of the Gate all around (GAA) Nanosheet FET (NSFET) are computationally examined. For …
Design and performance optimization of dopingless vertical nanowire TFET using gate stacking technique
This paper focuses on the impact of gate stacking (SiO2+ HfO2) on dopingless vertical
nanowire TFET (designed with gate-on-source technique) with an equivalent oxide …
nanowire TFET (designed with gate-on-source technique) with an equivalent oxide …
Temperature analysis of DMGC CGAA FET for future deep space and military applications: an insight into Analog/RF/Self-Heating/Linearity
PK Mudidhe, BR Nistala - ECS Journal of Solid State Science and …, 2023 - iopscience.iop.org
This manuscript introduces a pioneering investigation on the temperature effects of Dual
Material Graded Channel (DMGC) Cylindrical Gate All Around (CGAA) FET by outlining its …
Material Graded Channel (DMGC) Cylindrical Gate All Around (CGAA) FET by outlining its …
High-speed SOI junctionless transistor based on hybrid heterostructure of Si/Si0.5Ge0.5 and asymmetric spacers with outstanding analog/RF parameters
In junctionless (JL) transistors, impurity scattering limits the carrier velocity within a channel,
disturbing its performance in analog/RF applications. For the first time, the Si/Si 0.5 Ge 0.5 …
disturbing its performance in analog/RF applications. For the first time, the Si/Si 0.5 Ge 0.5 …
Innovative Spacer material integration in Tree-FETs for enhanced performance across Variable channel lengths
D Parvathi, P Prithvi - Micro and Nanostructures, 2024 - Elsevier
This work presents a novel three-channel Tree-FET optimized for superior DC and analog
performance metrics. The device structure features nanosheets with a width (NS WD) of 9 …
performance metrics. The device structure features nanosheets with a width (NS WD) of 9 …
Numerical simulation of core shell dual metal gate stack junctionless accumulation mode nanowire FET (CS-DM-GS-JAMNWFET) for low power digital applications
S Rewari, N Pandey - Micro and Nanostructures, 2024 - Elsevier
Abstract In this paper, Core Shell Dual Metal Gate Stack Junctionless Accumulation Mode
Nanowire FET (CS-DM-GS-JAMNWFET) is proposed, which has enhanced performance …
Nanowire FET (CS-DM-GS-JAMNWFET) is proposed, which has enhanced performance …
Investigation of spacer-engineered stacked nanosheet tunnel FET with varying design attributes
G Jain, RS Sawhney, R Kumar - Physica Scripta, 2024 - iopscience.iop.org
The stacked nanosheet field-effect transistors (SNS-FETs) are potential contenders for sub-7
nm technology. Device miniaturization leads to a larger off-state current and a higher …
nm technology. Device miniaturization leads to a larger off-state current and a higher …