GaSb band-structure models for electron density determinations from Raman measurements

MA Ochoa, JE Maslar, HS Bennett - Journal of applied physics, 2023 - pubs.aip.org
We investigate the use of Raman spectroscopy to measure carrier concentrations in n-type
GaSb epilayers to aid in the development of this technique for the nondestructive …

Thermal conductivity reduction by interfacial electric field of GaN/InGaN/GaN superlattice

SS Sahu, BK Sahoo - Materials Science and Engineering: B, 2021 - Elsevier
This paper demonstrates that interfacial polarization electric (IPE) field of GaN/In x Ga 1-x
N/GaN superlattice (SL) can be utilized to reduce thermal conductivity (k) further. IPE field …

A theoretical investigation of pyroelectric effect and thermoelectric improvement of AlInN/GaN heterostructures

SS Sahu, BK Sahoo - Thin solid films, 2019 - Elsevier
Improved thermoelectric (TE) efficiency of Al x In 1-x N/GaN heterostructure (HS) requires
high Seebeck coefficient (S) and electrical conductivity (σ); but small thermal conductivity (k) …

Reduction of in-plane and cross-plane thermal conductivities by polarization electric field induced in InxGa1-xN/GaN superlattice

SS Sahu, BK Sahoo - Journal of Alloys and Compounds, 2022 - Elsevier
In this paper, polarization electric field (PEF) induced in GaN/In x Ga 1-x N superlattice (SL)
was studied and found it can be treated as a reductant of thermal conductivity (k). Elastic …

Macroscopic Polarization Effect on Bowing Constant of Thermal Parameters of In x Ga1−x N

V Gedam, A Pansari, BK Sahoo - Journal of Electronic Materials, 2015 - Springer
In this work, we have investigated theoretically the effect of macroscopic polarization [sum of
spontaneous (SP) and piezoelectric (PZ) polarization] on various physical parameters of In x …

Macroscopic polarization and bowing constant of AlxGa1− xN

A Pansari, V Gedam, BK Sahoo - Physica B: Condensed Matter, 2015 - Elsevier
In this work, we have theoretically investigated the effect of macroscopic polarization (sum of
spontaneous and piezoelectric polarization) on various thermal parameters of Al x Ga 1− x N …

Reduction of thermal conductivity due to interfacial polarization mechanism of GaN/InxGa1-xN superlattice

SS Sahu, BK Sahoo - Physica E: Low-dimensional Systems and …, 2021 - Elsevier
In this work, it is theoretically investigated that interfacial polarization electric (IPE) field of
GaN/In x Ga 1-x N superlattice (SL) can be exploited for further reduction of thermal …

Role of interfacial electric field in thermal conductivity of indium-rich GaN/InxGa1−xN/GaN superlattices (x ≥ 0.7)

SS Sahu, BK Sahoo - Indian Journal of Physics, 2022 - Springer
Improved thermoelectric (TE) property involves low thermal conductivity (k) but high
electrical conductivity (σ) and Seebeck coefficient (S). Experiment has confirmed that …

Raman spectroscopy of compound semiconductors

J Ibánez, R Cuscó - Semiconductor Research: Experimental Techniques, 2012 - Springer
Raman spectroscopy has become a widely used characterization tool in today's
semiconductor research. In this chapter, we provide an introductory background to the …

Interfacial electric field and cross-plane thermal conductivity of GaN/InxGa1-xN superlattices (x = 0.1 and 0.3)

A Pansari, BK Sahoo - Applied Physics A, 2021 - Springer
Superior thermoelectric property requires high electrical conductivity (σ σ), Seebeck
coefficient (S) but low thermal conductivity (k). GaN/In x Ga 1-x N/GaN superlattice (SL) has …