Surface states have been a longstanding and sometimes underestimated problem in gallium
nitride (GaN) based devices. The instability caused by surface-charge-trapping in GaN …

Since the discovery of two-dimensional electron gas at the LaAlO3/SrTiO3 interface, its
intriguing physical properties have garnered significant interests for device applications. Yet …

In this study, high electron mobility transistor (HEMT) device was used as an immuno
biosensor to measure concentration of a stress hormone, cortisol, by using selective binding …

In this article, the impact of gamma () irradiation on passivated and unpassivated
AlGaN/GaN HEMT is presented in detail. Passivated and unpassivated GaN-HEMT devices …

Yellow luminescence (YL) is probably the longest and most studied defect-related
luminescence band in GaN, yet its electronic structure or chemical identity remain unclear …

In this article, by means of a 2-D ensemble Monte Carlo simulator, the Schottky barrier
diodes (SBDs) with realistic geometries based on GaAs and GaN are studied as promising …

In this work, a layer of graphene is inserted into Al 2 O 3/recessed gate AlGaN/GaN
structures to realize the positive shift of flatband voltage V FB. With a chemically inert surface …

In the present study, new process of N 2 pre-treated (NP) Si3N4 passivation on Al0. 3Ga0.
7N/AlN/GaN HEMTs (High Electron Mobility Transistors) has been developed and its impact …

In gallium nitride (GaN) lateral power devices with advanced E-field management, isolation
becomes a bottleneck for achieving higher breakdown voltage (BV). To understand the …

Trapping of charge at surface states is a longstanding problem in GaN that hinders a full
realization of its potential as a semiconductor for microelectronics. At least part of this charge …