The self-assembled nanostructured materials described in this book offer a number of
advantages over conventional material technologies in a wide range of sectors. World …

The carrier localization phenomenon has been investigated for GaBiAs by photomodulated
transmittance (PT) and photoluminescence (PL). In the case of PT measurements, a …

This study presents a new model for point-defect modification in III-VN alloys through first-
principle calculations and several validation experiments conducted in our previous study …

We have examined the influence of electron irradiation and rapid thermal annealing on
photoluminescence emission from GaAsNBi alloys. Electron irradiation of a 1-eV …

We have investigated characteristics of photoluminescence (PL) spectra obtained from as-
grown and annealed Ga N 0.027 As 0.863 Sb 0.11∕ Ga As single quantum wells (SQWs) …

Abstract Low-temperature (T= 30 K) photoluminescence (PL) and post thermal annealing
effects on 150 KeV proton irradiated GaInAsN bulk, single quantum well and triple quantum …

We have investigated the influence of 7 MeV electron irradiation (10 14–10 15 cm− 2 range)
and subsequent rapid thermal annealing (RTA) on luminescence efficiency of nearly lattice …

Publisher Summary The chapter summarizes the radiation effects in quantum dot (QD)
structures. It defines several radiation effects and their applications to quantum size …

Effect of rapid thermal annealing on photoluminescence (PL) properties of InGaAs,
InGaNAs, InGaAsSb, and InGaNAsSb quantum wells (QWs) grown by molecular-beam …

The authors report on the influence of nitrogen incorporation on vacancies in GaAs based
superlattices. The samples were molecular beam epitaxy grown on p-type GaAs substrates …