Ab initio study of the annealing of vacancies and interstitials in cubic SiC: Vacancy-interstitial recombination and aggregation of carbon interstitials
M Bockstedte, A Mattausch, O Pankratov - Physical Review B, 2004 - APS
The annealing kinetics of mobile intrinsic defects in cubic SiC is investigated by an ab initio
method based on density-functional theory. The interstitial-vacancy recombination, the …
method based on density-functional theory. The interstitial-vacancy recombination, the …
Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide
Nickel-based contacts, deposited on 4H-SiC C-face substrates, were annealed at
temperatures ranging from 800 to 1040 C and the phase composition of the contact layers …
temperatures ranging from 800 to 1040 C and the phase composition of the contact layers …
Aggregation of carbon interstitials in silicon carbide: A theoretical study
Ab initio supercell calculations have been carried out to investigate clusters of carbon
interstitials in 3C-and 4H-SiC. Based on the calculated formation energies, the complex …
interstitials in 3C-and 4H-SiC. Based on the calculated formation energies, the complex …
Theoretical study of vacancy diffusion and vacancy-assisted clustering of antisites in SiC
Using the self-consistent-charge density-functional-based tight-binding (SCC-DFTB)
method, we have investigated the migration of vacancies at high temperatures, taking into …
method, we have investigated the migration of vacancies at high temperatures, taking into …
Negative- carbon vacancy in 4-SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site
The carbon vacancy (VC) has been suggested by different studies to be involved in the Z 1/Z
2 defect-a carrier lifetime killer in SiC. However, the correlation between the Z 1/Z 2 deep …
2 defect-a carrier lifetime killer in SiC. However, the correlation between the Z 1/Z 2 deep …
Signature of intrinsic defects in SiC: Ab initio calculations of hyperfine tensors
M Bockstedte, M Heid, O Pankratov - Physical Review B, 2003 - APS
To reveal the microscopic origin of the spin-resonance centers in 3C-and 4H-SiC, we
perform first-principles calculations of the hyperfine tensors for vacancy-related defects and …
perform first-principles calculations of the hyperfine tensors for vacancy-related defects and …
EPR and theoretical studies of positively charged carbon vacancy in
T Umeda, J Isoya, N Morishita, T Ohshima… - Physical Review B …, 2004 - APS
The carbon vacancy is a dominant defect in 4 H-Si C, and the “EI5” electron-paramagnetic-
resonance (EPR) spectrum originates from positively charged carbon vacancies (VC+) at …
resonance (EPR) spectrum originates from positively charged carbon vacancies (VC+) at …
The carbon⟨ 100⟩ split interstitial in SiC
TT Petrenko, TL Petrenko… - Journal of Physics …, 2002 - iopscience.iop.org
A cluster calculation of hyperfine coupling constants based on density functional theory
(DFT) has been performed for the carbon⟨ 100⟩ split interstitial (V C+ 2C) in various charge …
(DFT) has been performed for the carbon⟨ 100⟩ split interstitial (V C+ 2C) in various charge …
Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC
Z Zolnai, NT Son, C Hallin, E Janzén - Journal of applied physics, 2004 - pubs.aip.org
Electron paramagnetic resonance (EPR) was used to study the annealing behavior of the
positively charged carbon vacancy ( EI 5 center) in electron-irradiated 4 H-SiC. At∼ 1000 …
positively charged carbon vacancy ( EI 5 center) in electron-irradiated 4 H-SiC. At∼ 1000 …
EPR identification of two types of carbon vacancies in
The EI5 and EI6 centers are typical intrinsic defects in radiation-damaged and semi-
insulating 4 H− SiC. So far, their origins have been assigned to positively charged carbon …
insulating 4 H− SiC. So far, their origins have been assigned to positively charged carbon …