We directly detect the coherent electromagnetic radiation originating from Bloch oscillations
of charge carriers in an electrically biased semiconductor superlattice structure. The …

The Al x Ga 1− x As/GaAs heterostructure system is potentially of great importance for many
high-speed electronics and optoelectronic devices, because the lattice parameter difference …

A highly important area where semiconductors and semimetals technology plays a major
role is that of optical Sensing devices. Receiving initial impetus because of infrared detector …

3.3. 1. Elemental source conventional molecular beam epitaxy 3.3. 2. Metalorganic vapor
phase epitaxy (MO VPE) 3.3. 3. Gas-source molecular beam epitaxy 3.3. 4. Modulated beam …

Publisher Summary Starting from one-dimensional quantum wells and superlattices, which
are best grown by modern epitaxial techniques, the field of heterostructures is progressively …

We have observed localized surface states (Tamm states) intentionally introduced in
AlGaAs/GaAs superlattices by a terminating layer of AlAs. The formation of these states is …

Quantum Mechanics: An Introduction for Device Physicists and Electrical Engineers, Third
Edition provides a complete course in quantum mechanics for students of semiconductor …

The first observation of scattering-controlled transmission resonances in superlattices is
reported. These originate from states supported by subsets of the superlattice of thickness …

We present a method for calculating the 1s exciton states of type-I and type-II superlattices in
an applied static electric field. Our approach is based upon choosing localized exciton wave …

We present the first calculation of the energies and absorption spectra of GaAs/Ga 0.65 Al
0.35 As superlattice excitons in the presence of an applied electric field. The resulting …