Ambient processed highly stable self-powered lead-free Cs2AgBiBr6 double perovskite photodetector in HTM-free architecture with Carbon as electrode
BKS Reddy, AS Kumar, R Akash, E Ramasamy… - Solar Energy, 2024 - Elsevier
Conventional Lead-based hybrid perovskite photodetectors face significant challenges due
to toxicity and poor ambient stability. This study contributes to the development of …
to toxicity and poor ambient stability. This study contributes to the development of …
Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers
Low threading dislocation density (TDD) in GaAs epitaxial layers grown on silicon substrate
(eg TDD< 10 6 cm− 2) is critical for GaAs-based optoelectronic and high-performance …
(eg TDD< 10 6 cm− 2) is critical for GaAs-based optoelectronic and high-performance …
Anomalous photoluminescence thermal quenching of sandwiched single layer MoS2
We report an unusual thermal quenching of the micro-photoluminescence (µ-PL) intensity
for a sandwiched single-layer (SL) MoS_2. For this study, MoS_2 layers were chemical …
for a sandwiched single-layer (SL) MoS_2. For this study, MoS_2 layers were chemical …
All-optical dynamic tuning of local excitonic emission of monolayer MoS2 by integration with Ge2Sb2Te5
H Ouyang, H Chen, Y Tang, J Zhang, C Zhang… - …, 2020 - degruyter.com
Strong quantum confinement and coulomb interactions induce tightly bound quasiparticles
such as excitons and trions in an atomically thin layer of transitional metal dichalcogenides …
such as excitons and trions in an atomically thin layer of transitional metal dichalcogenides …
Control wafer bow of InGaP on 200 mm Si by strain engineering
When epitaxially growing III–V compound semiconductors on Si substrates the mismatch of
coefficients of thermal expansion (CTEs) between III–V and Si causes stress and wafer bow …
coefficients of thermal expansion (CTEs) between III–V and Si causes stress and wafer bow …
[HTML][HTML] Emission, optical and electrical properties of GaInP/GaP nanofilms
ГМ Ширинов, СБ Донаев, БЕ Умирзаков… - Научно-технические …, 2023 - cyberleninka.ru
In order to search for materials with improved semiconductor properties, thin films of GaInP
have been fabricated on the GaP surface (the molecular beam epitaxy and ion implantation …
have been fabricated on the GaP surface (the molecular beam epitaxy and ion implantation …
[PDF][PDF] Emission, optical and electrical properties of GaInP/GaP nanofilms
GM Shirinov, SB Donaev… - Научно …, 2023 - physmath.spbstu.ru
In order to search for materials with improved semiconductor properties, thin films of GaInP
have been fabricated on the GaP surface (the molecular beam epitaxy and ion implantation …
have been fabricated on the GaP surface (the molecular beam epitaxy and ion implantation …
Low-temperature characterization of multijunction solar cells using a combined characterization approach
D Walker, JC Nocerino, JE Baidoo… - 2018 IEEE 7th World …, 2018 - ieeexplore.ieee.org
We combined light current-voltage, dark current-voltage, quantum efficiency, and
electroluminescence at varying low temperatures to identify and quantify defects, current …
electroluminescence at varying low temperatures to identify and quantify defects, current …
Electron Beam-based Techniques for the Characterization of Nanowire Solar Cells
V Piazza - 2018 - theses.hal.science
Although III-V nanowires (NWs) are recognized as promising candidates for the
development of new generation solar cells thanks to their very attractive optical properties …
development of new generation solar cells thanks to their very attractive optical properties …