Hardwired remapped memory
S Bowers, G Billing, SD Post - US Patent 8,799,717, 2014 - Google Patents
US8799717B2 - Hardwired remapped memory - Google Patents US8799717B2 -
Hardwired remapped memory - Google Patents Hardwired remapped memory Download …
Hardwired remapped memory - Google Patents Hardwired remapped memory Download …
Non-volatile memory to store memory remap information
G Billing, S Bowers, M Leinwander, SD Post - US Patent 8,412,987, 2013 - Google Patents
(57) ABSTRACT A memory device may comprise a port to receive remap information
regarding a memory device and may comprise a content-addressable memory (CAM) to …
regarding a memory device and may comprise a content-addressable memory (CAM) to …
Phase change memory cell and manufacturing method
HL Lung, R Liu, SH Chen, YC Chen - US Patent 7,688,619, 2010 - Google Patents
4,719,594 4,769,339 4,876,220 4.959, 812 5,106,775 5,166,096 5,166,758 5,177.567
5,332,923 5,391,901 5,515.488 5,534,712 5,550,396 5,687,112 5,688,713 5,716,883 …
5,332,923 5,391,901 5,515.488 5,534,712 5,550,396 5,687,112 5,688,713 5,716,883 …
Phase change memory device and manufacturing method
HL Lung, SH Chen - US Patent 7,786,460, 2010 - Google Patents
A phase change memory device comprises a photolithographically formed phase change
memory cell having first and second electrodes and a phase change element positioned …
memory cell having first and second electrodes and a phase change element positioned …
Integrated circuit 3D phase change memory array and manufacturing method
HL Lung - US Patent 8,173,987, 2012 - Google Patents
US PATENT DOCUMENTS 3,271,591 A 9/1966 Ovshinsky 3,530,441 A 9/1970 Ovshinsky
4,452,592 A 6, 1984 Tsai 4,599,705 A 7/1986 Holmberg et al. 4,719,594 A 1/1988 Young et …
4,452,592 A 6, 1984 Tsai 4,599,705 A 7/1986 Holmberg et al. 4,719,594 A 1/1988 Young et …
Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
HL Lung, EK Lai - US Patent 8,089,137, 2012 - Google Patents
US PATENT DOCUMENTS 3,271,591 A 9/1966 Ovshinsky 3,530,441 A 9/1970 Ovshinsky
4,452,592 A 6, 1984 Tsai 4,554,045. A* 1 1/1985 Bean et al..................... 117,105 4,599,705 …
4,452,592 A 6, 1984 Tsai 4,554,045. A* 1 1/1985 Bean et al..................... 117,105 4,599,705 …
Fully self-aligned pore-type memory cell having diode access device
HL Lung, CH Lam - US Patent 7,932,506, 2011 - Google Patents
5,754.472 5,789,277 5,789,758 5,814,527 5,831.276 5,837,564 5,869,843 5,879,955
5,902,704 5,920,788 5,933,365 5,952,671 5,958,358 5,970,336 5,985,698 5.998, 244 …
5,902,704 5,920,788 5,933,365 5,952,671 5,958,358 5,970,336 5,985,698 5.998, 244 …
Memory device having wide area phase change element and small electrode contact area
HL Lung - US Patent 7,772,581, 2010 - Google Patents
(57) ABSTRACT A memory cell device of the type that includes a memory material
switchable between electrical property states by application of energy, situated between first …
switchable between electrical property states by application of energy, situated between first …
Hardwired remapped memory
S Bowers, G Billing, SD Post - US Patent 8,412,985, 2013 - Google Patents
Memory devices are employed in many types of electronic devices, such as computers,
cellphones, PDAs, data loggers, and navigational equipment, just to name a few examples …
cellphones, PDAs, data loggers, and navigational equipment, just to name a few examples …
One-transistor, one-resistor, one-capacitor phase change memory
HL Lung - US Patent 7,933,139, 2011 - Google Patents
45.99. 705 A 7/1986 Holmberg et al. described herein. A memory cell as described herein
com 4,719,594 A 1/1988 Young et al. prises a transistor electrically coupled to first and …
com 4,719,594 A 1/1988 Young et al. prises a transistor electrically coupled to first and …