Density functional theory (DFT) with non-equilibrium Green's function (NEGF) formalism and
HSPICE simulator have been used to analyse the effect of elemental oxygen atom …

A comparative radio‐frequency (RF) and crosstalk analysis is performed on carbon nano‐
interconnects based on an efficient π‐type equivalent single‐conductor model of bundled …

The metal–semiconductor (MES)-based through silicon vias (TSV) has provided attractive
solutions over conventional metal–insulator–semiconductor (MIS) TSVs in recent three …

Graphene nanoribbon based interconnect has several advantageous properties over
traditional interconnect like power dissipation, delay and integration capability. But each …

The performance of three-dimensional integrated circuits primarily depends on the filler
material used in the through-silicon vias (TSVs). The most widely used filler material is Cu …

In a recent nanoregime, the cross-coupling capacitance plays an important role due to the
high packing density of integrated circuits. It can significantly affect the overall interconnect …

At high frequency, a magnetic field induced eddy current primarily dominates the
performance of a through silicon via (TSV) based 3D interconnects. In this regard, this paper …

The performance of a through silicon via (TSV) based 3D integrated circuit technology is
primarily dependent on the choice of an appropriate liner material. The most commonly used …

The approach of monolithic 3D IC (M3D) integration using monolithic inter-tier-vias (MIVs) as
interconnect structures is considered. Although, M3D ICs show many benefits of …

A new analysis method for the improvement and optimization of the geometrical layout
parameters associated with the on-chip n-well meander line resistor layout to have a low …