Positron annihilation spectroscopy is particularly suitable for studying vacancy-type
defects<? format?> in semiconductors. Combining state-of-the-art experimental and …

Three topical materials systems are discussed from the point of view of point defect
characterization with positron annihilation spectroscopy. The family of III‐nitride …

Electronic structure calculations are used to investigate the binding energies of defect pairs
composed of lattice vacancies and phosphorus or arsenic atoms (E centers) in silicon …

The effect of Co 60 gamma-ray irradiation on potassium dihydrogen phosphate crystals is
investigated at doses ranging from 1 kGy to 100 kGy with different diagnostics, including UV …

We have found evidence of a second acceptor state of the E center in Si 1− x Ge x by using
positron annihilation spectroscopy. To achieve this, we studied proton irradiated n-type Si 1 …

Thermal evolution of vacancy complexes was studied in P-doped ([P]= 10 18 cm− 3) proton
irradiated Si 1− x Ge x with Ge contents of 10%, 20%, and 30% in the range of 250–350° C …

The potential of positron annihilation spectroscopy (PAS) for defect characterization at the
atomic scale in semiconductors has been demonstrated in thin multilayer structures of SiGe …

The aim of this contribution is to present a review of the results related to vacancy complexes
in SiGe obtained in the positron group at Helsinki University of Technology. We have studied …

Evolution of the chemical surroundings of vacancy complexes in Sb-doped ([Sb]= 2× 10 18
and 2× 10 19 cm-3) Si 0.8 Ge 0.2 was studied with positron annihilation spectroscopy in …

We have performed systematic measurements of the splitting kinetics induced by H-only and
He+ H sequential ion implantation into relaxed Si 0.8 Ge 0.2 layers and compared them with …