Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …
expanding into other application areas including digital and quantum computing electronics …
Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum technologies
Spin defects in wide-band gap semiconductors are promising systems for the realization of
quantum bits, or qubits, in solid-state environments. To date, defect qubits have only been …
quantum bits, or qubits, in solid-state environments. To date, defect qubits have only been …
Quantum computing with defects
The successful development of quantum computers is dependent on identifying quantum
systems to function as qubits. Paramagnetic states of point defects in semiconductors or …
systems to function as qubits. Paramagnetic states of point defects in semiconductors or …
A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application
First-principles calculations in combination with group theory analyses were employed to
study the spin-polarized electronic structures of CBVN centers consisting of a nitrogen …
study the spin-polarized electronic structures of CBVN centers consisting of a nitrogen …
Robust half-metallicity and topological aspects in two-dimensional Cu-TPyB
Half-metallicity due to the coexistence of metallic nature for one spin component and
insulating nature for the other is a base of spintronics devices, but was only achieved in few …
insulating nature for the other is a base of spintronics devices, but was only achieved in few …
[HTML][HTML] Space charge control of point defect spin states in AlN
One barrier to developing quantum information systems based on impurity point defects is
that the desirable spin states of the defects are often unstable for Fermi levels obtained at …
that the desirable spin states of the defects are often unstable for Fermi levels obtained at …
A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application
Y Tu, Z Tang, XG Zhao, Y Chen, ZQ Zhu… - Applied Physics …, 2013 - pubs.aip.org
Spin-polarized electronic structures of V Al ON centers consisting of an aluminum vacancy
and a substitutional oxygen in AlN with different charge states are studied by first-principles …
and a substitutional oxygen in AlN with different charge states are studied by first-principles …
A computational study of magnetic exchange interactions of 3d and 4f electrons in Ti-Ce co-doped AlN
To investigate the nature of 3d-4f exchange interactions in III-Nitride semiconductors, Ti-Ce
co-doped AlN were studied using first principles calculations. The calculations were …
co-doped AlN were studied using first principles calculations. The calculations were …
General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures: The case of the center in diamond
A major challenge in creating a quantum computer is to find a quantum system that can be
used to implement the qubits. For this purpose, deep centers are prominent candidates, and …
used to implement the qubits. For this purpose, deep centers are prominent candidates, and …
Can cation vacancy defects induce room temperature ferromagnetism in GaN?
The unique properties of gallium nitride (GaN) crystal, such as a wide band-gap and high
thermal conductivity, make it ideal material for electronic and optoelectronic devices …
thermal conductivity, make it ideal material for electronic and optoelectronic devices …