Fundamentals and practical dielectric implications of stoichiometry and chemical design in a high-performance ferroelectric oxide: BaTiO3

CA Randall, P Yousefian - Journal of the European Ceramic Society, 2022 - Elsevier
The processing science and fundamental understanding of defect chemistry of BaTiO 3 is a
model example of how material science is used to guide the materials engineering of …

High resistivity under colossal permittivity SrTiO3 based ceramic via controlling ion diffusion

H Xie, Y Pu, Y Shang, Q Pan, Y Hao, L Zhang… - Ceramics …, 2024 - Elsevier
Abstract High-performance Sr 0.99 La 0.01 TiO 3 ceramics were synthesized using a
conventional solid-phase method, and Sr 0.99 La 0.01 TiO 3 percolated (SLT10-P) samples …

Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization

ZY Yue, ZD Zhang, ZJ Wang - Journal of Materials Science & Technology, 2024 - Elsevier
As a new type of nonvolatile memory, the resistive memristor has broad application
prospects in information storage and neural computing based on its excellent resistive …

Suppressing resistance degradation in SrTiO3-based colossal permittivity capacitor material

H Xie, Y Pu, Y Shang, L Zhang, B Wang, Y Hao - Ceramics International, 2023 - Elsevier
At present, research on colossal permittivity materials is extensive but challenging to
achieve simultaneous properties of colossal permittivity, low loss, and high resistivity …

Superior energy storage BaTiO3-based amorphous dielectric film with polymorphic hexagonal and cubic nanostructures

X Jiang, J Lv, Z Chen, Z Shen, J Wang, Z Deng… - Chemical Engineering …, 2022 - Elsevier
An effective route to improve the energy storage performance by constructing polymorphic
nanostructures in (1-x) BaTiO 3-xBi (Zn 1/2 Zr 1/2) O 3 (BT-BZZ) films was proposed. The …

Thermally stimulated depolarization current measurements on degraded lead zirconate titanate films

B Akkopru‐Akgun, DM Marincel, K Tsuji… - Journal of the …, 2021 - Wiley Online Library
Charge transport mechanisms governing DC resistance degradation in ferroelectric films are
influenced by defects, particularly oxygen vacancies. This paper demonstrates that oxygen …

Leakage current characteristics and DC resistance degradation mechanisms in Nb doped PZT films

B Akkopru-Akgun, T JM, K Tsuji, K Wang… - Journal of Applied …, 2021 - pubs.aip.org
The correlation between defect chemistry, leakage currents, and time-dependent dielectric
breakdown was studied for PbZr 0.52 Ti 0.48 O 3 (PZT) films doped with 0.5, 1, 2, or 4 mol …

Effect of Mg-doping and Fe-doping in lead zirconate titanate (PZT) thin films on electrical reliability

D Koh, SW Ko, JI Yang, B Akkopru-Akgun… - Journal of Applied …, 2022 - pubs.aip.org
Uniformly acceptor doped Pb (Zr 0.48 Ti 0.52) O 3 (PZT) films with 2 mol.% Mg or Fe
prepared by chemical solution deposition exhibited decreased dielectric constants and …

Enhanced energy storage in relaxor (1-x)Bi0.5Na0.5TiO3-xBaZryTi1-yO3 thin films by morphotropic phase boundary engineering

H Kobald, AM Kobald, I Panzic, M Deluca - Communications materials, 2025 - nature.com
Perovskites at the crossover between ferroelectric and relaxor are often used to realize
dielectric capacitors with high energy and power density and simultaneously good …

Polarity dependent DC resistance degradation and electrical breakdown in Nb doped PZT films

B Akkopru-Akgun, W Zhu, CA Randall, MT Lanagan… - APL Materials, 2019 - pubs.aip.org
The role of interfacial defect chemistry in time dependent breakdown and associated charge
transport mechanisms was investigated for Pb0. 99 (Zr0. 52Ti0. 48) 0.98Nb0. 02O3 (PNZT) …