High-drain field impacting channel-length modulation effect for nano-node n-channel FinFETs
MC Wang, WC Hsieh, CR Lin, WL Chu, WS Liao… - Crystals, 2021 - mdpi.com
Three dimensional (3-D) FinFET devices with an ultra-high Si-fin aspect ratio have been
developed after integrating a 14Å nitrided gate oxide upon the silicon on insulator (SOI) …
developed after integrating a 14Å nitrided gate oxide upon the silicon on insulator (SOI) …
[PDF][PDF] High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs. Crystals 2021, 11, 262
M Wang, W Hsieh, C Lin, W Chu… - ed: s Note: MDPI …, 2021 - pdfs.semanticscholar.org
Three dimensional (3-D) FinFET devices with an ultra-high Si-fin aspect ratio have been
developed after integrating a 14Å nitrided gate oxide upon the silicon on insulator (SOI) …
developed after integrating a 14Å nitrided gate oxide upon the silicon on insulator (SOI) …
Modeling and Optimization of Electron-Beam Lithographic Process
D Li - 2021 - search.proquest.com
An important issue in electron-beam (e-beam) lithography is to minimize the critical
dimension (CD) error and line edge roughness (LER). This dissertation presents a method …
dimension (CD) error and line edge roughness (LER). This dissertation presents a method …