US4309225A - Method of crystallizing amorphous material with a moving energy beam - Google
Patents US4309225A - Method of crystallizing amorphous material with a moving energy beam …

Semiconductor integrated devices such as transistors are formed in a? lm of semiconductor
material formed on a substrate. For improved device characteristics, the semicon ductor …

A laser annealing method for a semiconductor thin film for irradiating the semiconductor thin
film with a laser beam having a section whose outline includes a straight-line portion, so as …

Sameshima et al.,(I)" XeCl Excimer Laser Annealing Used to Fabricate Poly-SI TFTS", Mat,
Res. Soc. Symp Pro. Vol. 71 Apr. 1986 pp. 435-440. Sameshima et al.,(II)" XeCl Excimer …

In accordance with one aspect, the present invention provides a method for providing
polycrystalline films having a con trolled microstructure as well as a crystallographic texture …

The present disclosure is directed to methods and systems for processing a thin film
samples. In an exemplary method, semiconductor thin films are loaded onto two different …

Abstract Systems and methods for reducing a surface roughness of a polycrystalline or
single crystal thin film produced by the sequential lateral solidification process are disclosed …

US5496768A - Method of manufacturing polycrystalline silicon thin film - Google Patents
US5496768A - Method of manufacturing polycrystalline silicon thin film - Google Patents …

(57) Methods for processing an amorphous silicon thin film sample into a polycrystalline
silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of …

BACKGROUND OF THE INVENTION The present invention relates to a method of produc
ing a polycrystalline semiconductor thin? lm such as a polycrystalline silicon thin? lm used …