Three-dimensional integrated circuits (3-D IC) technology has emerged in the past few
decades, driven in part by the techno-economic difficulties of dimensional scaling and the …

In this review, a review a of the applications of micro-Raman spectroscopy (μRS) to
characterize the residual strain and/or stress in electronic packaging is presented. Micro …

When placing a graphene membrane on a substrate, gas molecules may be trapped
underneath to form bubbles. The size of a graphene bubble (eg, diameter and height) …

Three-dimensional (3-D) integration with through-silicon-vias (TSVs) has emerged as an
effective approach to overcome the wiring limit beyond the 32nm technology node. Due to …

Three-dimensional (3-D) integration with through-silicon vias (TSVs) has emerged as an
effective solution to overcome the wiring limit imposed on device density and performance …

Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

Three-dimensional (3D) integration has emerged as a potential solution to the wiring limits
imposed on chip performance, power dissipation, and packaging form factor beyond the 14 …

The stress dependencies of the phonon modes in a 4H silicon carbide (SiC) crystal were
investigated. The deformation potentials of the A 1 (TO), E 2, and E 1 (TO) modes were …

This paper provides a detailed description explaining how to calculate the relation between
the silicon Raman frequency and local stress or strain in the silicon, applied to stress …

To address the abating performance improvements from device scaling, innovative 2.5-D
and 3-D integrated circuits with vertical interconnects called through-silicon vias (TSVs) …