Intermediate band solar cells: Present and future
In the quest for high‐efficiency photovoltaics (PV), the intermediate band solar cell (IBSC)
was proposed in 1997 as an alternative to tandem solar cells. The IBSC offers 63 …
was proposed in 1997 as an alternative to tandem solar cells. The IBSC offers 63 …
Property approach of Si based ZnO films under thermal shock
Z Liu, H Yang, J Wang, T Li, Y Hu, P Yang - Ceramics International, 2021 - Elsevier
Abstract ZnO and Al-doped ZnO (AZO) films were deposited on p-Si (100) wafers using
magnetron sputtering, the effect of thermal shock on Si based films and its interface were …
magnetron sputtering, the effect of thermal shock on Si based films and its interface were …
Physics, electrochemistry, photochemistry, and photoelectrochemistry of hybrid nanoparticles
Hybrid nanoparticles are expected not only to simply combine individual nanoparticles, but
also to significantly enhance their properties. Depending on the nanostructure and …
also to significantly enhance their properties. Depending on the nanostructure and …
Identifying the photon absorption characteristics of Cr-doped Cu2ZnSnS4 (CZTS: Cr) thin film deposited by Co-sputtering technique
This study investigates the potential of a quaternary compound semiconductor to be realized
as the absorber layer for third-generation intermediate band solar cells (IBSCs). In this work …
as the absorber layer for third-generation intermediate band solar cells (IBSCs). In this work …
Elucidating the effects of Cr–S variations in Cr-doped CZTS for intermediate band solar cell applications
Intermediate band (IB) materials, such as chromium-doped Cu 2 ZnSnS 4 (CZTS: Cr) show
promise for surpassing the Shockley-Queisser limit in solar cells. This study explores the …
promise for surpassing the Shockley-Queisser limit in solar cells. This study explores the …
Microstructural and surface morphological studies on Co doped ZnS diluted magnetic semiconductor thin films
Microstructural and surface morphological studies of Co (2.5%) doped ZnS thin films
deposited at different substrate temperatures (TS) of 200, 400 and 600° C by means of …
deposited at different substrate temperatures (TS) of 200, 400 and 600° C by means of …
p–n junction induced electron injection type transparent photosensitive film of Cu2O/carbon quantum dots/ZnO
J Pan, C Zhao, X Wei, C Chi, W Zhao, C Song… - …, 2018 - iopscience.iop.org
An electron injection type transparent photosensitive Cu 2 O/carbon quantum dot (C
QD)/ZnO p− n junction film was prepared by a simple route in which, successively, the ZnO …
QD)/ZnO p− n junction film was prepared by a simple route in which, successively, the ZnO …