Recent research on ohmic contacts on GaN-based materials

Y Liu - IOP Conference Series: Materials Science and …, 2020 - iopscience.iop.org
The most important components in most of the electronic products today, such as computers,
mobile phones or digital recorders, are closely related to semiconductor. Semiconductors …

High-speed GaN-based blue light-emitting diodes with gallium-doped ZnO current spreading layer

CL Liao, YF Chang, CL Ho… - IEEE Electron Device …, 2013 - ieeexplore.ieee.org
Conventional light-emitting diodes (LEDs) always pursue the high brightness required for
solid-state lighting. However, they always exhibit very low frequency bandwidth of tens MHz …

Ohmic contacts on p‐GaN

J Chen, WD Brewer - Advanced Electronic Materials, 2015 - Wiley Online Library
With the development of GaN‐based optoelectronic devices, the need for p‐GaN contacts
with low resistivity, good thermal stability, and high transparency or reflectivity has become …

Gallium

T Butcher, T Brown - Critical metals handbook, 2014 - Wiley Online Library
Gallium is magnetic and a good conductor of both electricity and heat. There are a few
minerals in which gallium forms a significant part. The main gallium‐bearing mineral is …

Hexagonal-based pyramid void defects in GaN and InGaN

AB Yankovich, AV Kvit, X Li, F Zhang… - Journal of Applied …, 2012 - pubs.aip.org
We report a void defect in gallium nitride (GaN) and InGaN, revealed by aberration-corrected
scanning transmission electron microscopy (STEM). The voids are pyramids with symmetric …

Thermal annealing effects on the performance of a Ga-doped ZnO transparent-conductor layer in a light-emitting diode

CH Lin, YF Yao, CY Su, C Hsieh, CG Tu… - … on Electron Devices, 2015 - ieeexplore.ieee.org
To identify the individually optimized thermal annealing conditions for reducing the contact
resistivity between highly Ga-doped ZnO (GaZnO) and doped-GaN and for improving the …

Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy

AV Kvit, AB Yankovich, V Avrutin, H Liu… - Journal of Applied …, 2012 - pubs.aip.org
We report microstructural characterization of heavily Ga-doped ZnO (GZO) thin films on GaN
and sapphire by aberration-corrected scanning transmission electron microscopy. Growth …

Multi-mechanism efficiency enhancement in growing Ga-doped ZnO as the transparent conductor on a light-emitting diode

YF Yao, CH Lin, C Hsieh, CY Su, E Zhu, S Yang… - Optics …, 2015 - opg.optica.org
The combined effects of a few mechanisms for emission efficiency enhancement produced
in the overgrowth of the transparent conductor layer of Ga-doped ZnO (GaZnO) on a surface …

Improvement in the light extraction of blue InGaN/GaN-based LEDs using patterned metal contacts

A Kadiyala, K Lee, LE Rodak, LA Hornak… - IEEE Journal of the …, 2013 - ieeexplore.ieee.org
We demonstrate a method to improve the light extraction from an LED using photonic crystal
(PhC)-like structures in metal contacts. A patterned metal contact with an array of Silicon …

Low resistance Ga-doped ZnO ohmic contact to p-GaN by reducing the sputtering power

W Gu, X Wu, J Zhang - Materials Science in Semiconductor Processing, 2018 - Elsevier
Ga-doped ZnO (GZO) thin films were deposited on p-GaN as transparent conducting layers
(TCLs) of GaN-based LEDs by radio-frequency (RF) magnetron sputtering. The sputtering …