In muon-spin-rotation experiments, positive muons are implanted in the material and come
to rest in the unrelaxed host lattice. The formation of the final configuration requires a lattice …

We have measured excess carrier lifetime in silicon using photoexcited muon spin
spectroscopy. Positive muons implanted deep in a wafer can interact with the optically …

We demonstrate that, by using low-energy positive muon (μ+) spin spectroscopy as a local
probe technique, the profiles of free charge carriers can be directly determined in the …

A high power pulsed laser system has been installed on the high magnetic field muon
spectrometer (HiFi) at the International Science Information Service pulsed neutron and …

The controlled manipulation of the charge carrier concentration in nanometer thin layers is
the basis of current semiconductor technology and of fundamental importance for device …

In implantation experiments, the implanted particle is shot with a certain energy into the
material and comes to rest at a site which may not correspond to the final position. The …

Sapphire (α-Al 2 O 3) has been investigated by the muon spin rotation (μ SR) method in
several experiments in the past. The main μ SR component is a diamagnetic-like signal with …

We report Muonium (Mu) donor and acceptor levels in Czochralski-grown Silicon
Germanium alloys (Cz-Si 1− x Ge x). Measurement of these defect energies provides an …

The transition state model proposed for muonium formation in solids is critically discussed
with respect to the delayed capture model. The two models differ mainly in how the electron …

In the context of a systematic study of oxide materials with the muon spin spectroscopy (μ
SR) technique, we report here on an investigation of paramagnetic Nd 2 O 3. The question …