On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts
A TURUT - Turkish Journal of Physics, 2020 - journals.tubitak.gov.tr
It is expected the fact that the current following across metal-semiconductor (MS) rectifying
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …
Temperature-dependent study of the fabricated ZnS/p-Si heterojunction
In the present work, ZnS thin film was deposited onto a p-type Si-substrate using the
chemical bath deposition method, and subsequently Ag/n-ZnS/p-Si/Ag heterojunction device …
chemical bath deposition method, and subsequently Ag/n-ZnS/p-Si/Ag heterojunction device …
Photoresponse characteristics of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode
AB Ulusan, A Tataroglu, Ş Altındal… - Journal of Materials …, 2021 - Springer
Photoresponse characteristics of the Au/(CoFe2O4-PVP)/n-Si (MPS) diode were
investigated using current–voltage (I–V) measurements achieved under dark and various …
investigated using current–voltage (I–V) measurements achieved under dark and various …
Self-powered and improved photoresponsive broadband photodetecting sensors using Au/NiFe2O4/p-Si heterojunction architecture
NKR Nallabala, SS Kushvaha, A Kumari… - Materials Science in …, 2023 - Elsevier
Recently, heterojunctions-based photodetectors (PDs) with outstanding photosensitivity and
fast switching time received substantial attention due to their broadband (BB) photoresponse …
fast switching time received substantial attention due to their broadband (BB) photoresponse …
Analysis of the current transport characteristics (CTCs) in the Au/n-Si Schottky diodes (SDs) with Al2O3 interfacial layer over wide temperature range
A Buyukbas-Ulusan, A Tataroglu… - ECS Journal of Solid …, 2023 - iopscience.iop.org
Temperature dependent electrical-parameters and CTCs in Au/Al 2 O 3/n-Si SDs have been
analysed between 200 K and 400 K using current/voltage (IV) characteristics. While the …
analysed between 200 K and 400 K using current/voltage (IV) characteristics. While the …
Frequency and voltage dependence of electrical and dielectric properties in metal-interfacial layer-semiconductor (MIS) type structures
Ö Sevgili, Y Azizian-Kalandaragh, Ş Altındal - Physica B: Condensed …, 2020 - Elsevier
Zinc-ferrite nanostructures were fabricated using ultrasonic-assisted-method. FE-SEM, EDX
and XRD were utilized for the investigation of morphological and structural properties …
and XRD were utilized for the investigation of morphological and structural properties …
A novel thiophene-based D-π-A type organic material: Synthesis, characterization and Schottky diode applications
Herein, a newly designed π-conjugated D-π-A type organic material, namely TPA-T-DCV 9,
was synthesized in excellent yield by introducing triphenylamine as electron donor and …
was synthesized in excellent yield by introducing triphenylamine as electron donor and …
A Compare Study on Electrical Properties of MS Diodes with and Without CoFe2O4-PVP Interlayer
A Tataroglu, A Buyukbas Ulusan, Ş Altındal… - Journal of Inorganic and …, 2021 - Springer
Abstract Cobalt ferrite (CoFe 2 O 4) nanostructures in powder form were synthesized by an
ultrasound assisted method. The crystalline structure of it was determined by XRD method …
ultrasound assisted method. The crystalline structure of it was determined by XRD method …
Analysis of temperature dependent current-voltage characteristics of Sn/p-GaTe/In Schottky diode
In present study, Sn/p-GaTe/In Schottky diode is fabricated using thermal evaporation
method. The current–voltage (I–V) measurements of Sn/p-GaTe/In diode are carried out in …
method. The current–voltage (I–V) measurements of Sn/p-GaTe/In diode are carried out in …
The investigation of current condition mechanism of Al/Y2O3/p-Si Schottky barrier diodes in wide range temperature and illuminate
Abstract Yttrium oxide (Y 2 O 3) powder was used as an interface layer between metal (Al)
and semiconductor (p-Si). Y 2 O 3 powder was coated with a spin-coating method on the p …
and semiconductor (p-Si). Y 2 O 3 powder was coated with a spin-coating method on the p …