This paper presents a Doherty power amplifier (DPA) based on asymmetric cells using an
even input power drive and an appropriate peak fundamental current ratio (FCR) between …

This paper presents a fully integrated gallium-nitride high-electron-mobility transistor (GaN-
HEMT) Doherty power amplifier (DPA) based on a compact load network for small-cell …

This paper presents a method of improving efficiency for the two-stage Doherty power
amplifier (DPA) using the optimized current of the peaking amplifier. The DPA has a two …

This paper proposes a modified Doherty power amplifier (DPA) configuration for bandwidth
and efficiency operations. To mitigate the efficiency degradation resulting from the …

A gallium‐nitride high electron mobility transistor (GaN‐HEMT) three‐way asymmetric
Doherty power amplifier using an unequal three‐way Gysel power divider (GPD) is …

A novel substrate integrated waveguide to rectangular waveguide (RWG) transition for
effective power transfer is proposed. The substrate taper is inserted into a conventional …

This paper presents a two-stage PA MMIC using 0.4-μm GaN-HEMT. Two-stage structure is
adopted to take its high gain property and simple inter-stage matching network. The size and …

This paper presents a two-stage power amplifier MMIC using a $0.4 {\mu} m $ GaN-HEMT
process. The two-stage structure provides high gain and compact circuit size using an …

This paper presents linearity improvement technique for a two-stage nonlinear amplifier.
Third-order intermodulation terms (IM3) at the output of an amplifier can be canceled out by …

This paper presents a 2.6 GHz Doherty power amplifier IC to enhance the back-off efficiency.
In order to apply to small-cell base stations, the Doherty power amplifier was fabricated …