Single-pulse avalanche mode robustness of commercial 1200 V/80 mΩ SiC MOSFETs
MD Kelley, BN Pushpakaran… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
Commercialization of 1200-V silicon carbide (SiC) MOSFET has enabled power electronic
design with improved efficiency as well as increased power density. High-voltage spikes …
design with improved efficiency as well as increased power density. High-voltage spikes …
Evaluation of long-term reliability and overcurrent capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs during narrow current pulsed conditions
Silicon carbide (SiC) is becoming a preferred technology of choice for power dense
application compared with silicon (Si). A more comprehensive analysis of the long-term …
application compared with silicon (Si). A more comprehensive analysis of the long-term …
High-speed medium-voltage SiC thyristors for pulsed power applications
The high peak current withstand capability of thyristors makes them extremely suitable for
pulsed power applications. Silicon carbide (SiC) thyristors provide significant efficiency …
pulsed power applications. Silicon carbide (SiC) thyristors provide significant efficiency …
Single-pulse avalanche mode operation of 10-kV/10-A SiC MOSFET
The high-voltage silicon carbide MOSFET is a state-of-the-art solution for increasing power
density and efficiency in power electronics; nonetheless, a full-scope of failure modes during …
density and efficiency in power electronics; nonetheless, a full-scope of failure modes during …
Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor
H Liu, S Liang, Y Zhou, J Wang - IET Power Electronics, 2024 - Wiley Online Library
Abstract Silicon Carbide (SiC) Gate Turn‐off (GTO) thyristor is regarded as a promising
option for pulsed power applications; however, the formation of high di/dt has been …
option for pulsed power applications; however, the formation of high di/dt has been …
Reverse-bias stress-induced electrical parameters instability in 4H-SiC JBS diodes terminated nonequidistance FLRs
Q Song, H Yuan, Q Sun, C Han, X Tang… - … on Electron Devices, 2019 - ieeexplore.ieee.org
In this article, the breakdown voltage (V BR) shift of 4H-SiC Junction Barrier Schottky (JBS)
diodes terminated by optimum nonequidistant field limiting rings (FLRs) subject to reverse …
diodes terminated by optimum nonequidistant field limiting rings (FLRs) subject to reverse …
Injection modulation of p+–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base
X Wang, H Pu, Q Liu, C Chen, Z Chen - Chinese Physics B, 2017 - iopscience.iop.org
To overcome hole-injection limitation of p+–n emitter junction in 4H–SiC light triggered
thyristor, a novel high-voltage 4H–SiC light triggered thyristor with double-deck thin n-base …
thyristor, a novel high-voltage 4H–SiC light triggered thyristor with double-deck thin n-base …
[图书][B] Modeling and validation of 4H-SiC low voltage MOSFETs for integrated circuit design
S Ahmed - 2017 - search.proquest.com
The objective of this work is to develop industry standard compact models for SiC NMOS
and PMOS devices. A widely used compact model used in silicon industry called BSIM3V3 …
and PMOS devices. A widely used compact model used in silicon industry called BSIM3V3 …
Non-simultaneous triggering induced failure of CS-MCT under repetitive high-current pulse condition
This work demonstrates the failure mechanism of the cathode-short MOS controlled thyristor
(CS-MCT) under repetitive high-current pulse condition. It is found that the hot spot and burn …
(CS-MCT) under repetitive high-current pulse condition. It is found that the hot spot and burn …
Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile
X Wang, HB Pu, Q Liu, LQ An - Chinese Physics B, 2018 - iopscience.iop.org
A new 4H–SiC light triggered thyristor (LTT) with 7-shaped thin n-base doping profile is
proposed and simulated using a two-dimensional numerical method. In this new structure …
proposed and simulated using a two-dimensional numerical method. In this new structure …