The discovery and continued development of the laser has revolutionized both science and
industry. The advent of miniaturized, semiconductor lasers has made this technology an …

A cornerstone in the successful application of semiconductor nanowire devices is controlled
impurity doping. In this review article, we discuss the key results in the field of semiconductor …

Using transient terahertz photoconductivity measurements, we have made noncontact, room
temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP …

The atomic distances in hexagonal polytypes of III− V compound semiconductors differ from
the values expected from simply a change of the stacking sequence of (111) lattice planes …

Indium phosphide (InP) nanowires, which have crystal phase mixing and transition from zinc
blende (ZB) to wurtzite (WZ), are grown in intermediate growth conditions between ZB and …

On-chip optical interconnects still miss a high-performance laser monolithically integrated on
silicon. Here, we demonstrate a silicon-integrated InP nanolaser that operates at room …

The ever‐increasing demand for information density and accuracy in highly integrated
photonic devices calls for miniaturization of a coherent light source with broadband tunability …

We report single crystal phase and non-tapered wurtzite (WZ) and zincblende twinning
superlattice (ZB TSL) InP nanowires (NWs). The NWs are grown in a metalorganic vapor …

Semiconductor quantum dots embedded in nanowires (NW-QDs) can be used as efficient
sources of nonclassical light with ultrahigh brightness and indistinguishability, needed for …

For the first time, we report a complete control of crystal structure in InAs1–x Sb x NWs by
tuning the antimony (Sb) composition. This claim is substantiated by high-resolution …