The interplay between band gap renormalization and band filling (Burstein-Moss effect) in n-
type wurtzite GaN is investigated. For a wide range of electron concentrations up to 1.6× 10 …

In the present work, the Laser Molecular Beam Epitaxy (Laser MBE) technique has been
used for the fabrication of InGaN/GaN quantum well LEDs. A comparative study was …

Freestanding n-type intentionally doped GaN layers grown by halide vapor phase epitaxy
(HVPE) were studied by transient photoluminescence (PL). Concentrations of silicon and …

This work reports on the photoreflectance (PR) study of Si doped GaN layers (GaN: Si) with
different doping levels (2.1× 10 17–2.8× 10 19 cm− 3). GaN: Si samples have been …

Based on the full band electronic structure calculations, first we consider the effect of n-type
doping on the optical absorption and the refractive index in wurtzite InN and GaN. We …

One-dimensional (1D) GaN nanostructures have attracted increasing attention due to their
unique optical absorption and electrical transport characteristics. Herein, we demonstrate …

On the road towards next generation high efficiency solar cells, the ternary Indium Gallium
Nitride (InGaN) alloy is a good passenger since it allows to cover the whole solar spectrum …

Deep ultraviolet light-emitting diodes (LEDs) composed of III-Nitride semiconductors need
layers of heavy doping (> 1× 10 19 cm− 3) to overcome large dopant activation energies and …

Abstract The Alx Ga1–xN layers with a wide range of AlN molar fraction (0< x< 0.6) were
grown by ammonia MBE on (0001)‐oriented sapphire substrates using silane as the silicon …

Vertical oriented GaN microrods were grown by metal-organic vapor phase epitaxy with four
different n-type carrier concentration sections above 10 19 cm− 3 along the c-axis. In …