Preparation and Characterization of NbxOy Thin Films: A Review
Niobium oxides (NbO, NbO2, Nb2O5), being a versatile material has achieved tremendous
popularity to be used in a number of applications because of its outstanding electrical …
popularity to be used in a number of applications because of its outstanding electrical …
Atomic layer deposition of groups 4 and 5 transition metal oxide thin films: focus on heteroleptic precursors
T Blanquart, J Niinistö, M Ritala… - Chemical Vapor …, 2014 - Wiley Online Library
The atomic layer deposition (ALD) process, an alternative to CVD, is universally appreciated
for its unique advantages such as excellent repeatability, conformity, and thickness control at …
for its unique advantages such as excellent repeatability, conformity, and thickness control at …
Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs
E Atanassova, A Paskaleva - Microelectronics Reliability, 2007 - Elsevier
The present status, successes, challenges and future of Ta2O5, and mixed Ta2O5-based
high-k layers as active component in storage capacitors of nanoscale DRAMs are …
high-k layers as active component in storage capacitors of nanoscale DRAMs are …
Evaluation and Comparison of Novel Precursors for Atomic Layer Deposition of Nb2O5 Thin Films
T Blanquart, J Niinisto, M Heikkila… - Chemistry of …, 2012 - ACS Publications
Atomic layer deposition (ALD) of Nb2O5 thin films was studied using three novel precursors,
namely, tBuN Nb (NEt2) 3, tBuN Nb (NMeEt) 3, and tamylN Nb (OtBu) 3. These …
namely, tBuN Nb (NEt2) 3, tBuN Nb (NMeEt) 3, and tamylN Nb (OtBu) 3. These …
A new precursor route for the growth of NbO2 thin films by chemical vapor deposition
Niobium dioxide (NbO 2) exhibits metal-insulator transition (Mott transition) and shows the
potential for application in memristors and neuromorphic devices. Presently growth of NbO 2 …
potential for application in memristors and neuromorphic devices. Presently growth of NbO 2 …
Effect of isovalent substitution on microstructure and phase transition of LaNb1− xMxO4 (M= Sb, V or Ta; x= 0.05–0.3)
S Wachowski, A Mielewczyk-Gryn, M Gazda - Journal of Solid State …, 2014 - Elsevier
LaNb 1− x M x O 4 oxides with pentavalent elements of different ionic sizes (M= Sb, Ta and
V, x= 0.05–0.3) were synthesized by the solid state reaction method. Special interest was …
V, x= 0.05–0.3) were synthesized by the solid state reaction method. Special interest was …
[HTML][HTML] Synthesis of novel volatile niobium precursors containing carboxamide for Nb2O5 thin films
A series of novel Nb (V) t Bu-imido/N-alkoxy carboxamide complexes, NbCl 2 (N t
Bu)(pyridine)(edpa)(1), NbCl 2 (N t Bu)(pyridine)(mdpa)(2), and Nb (N t Bu)(mdpa) 3 (3) …
Bu)(pyridine)(edpa)(1), NbCl 2 (N t Bu)(pyridine)(mdpa)(2), and Nb (N t Bu)(mdpa) 3 (3) …
Dielectric properties and X-ray photoelectron spectroscopic studies of niobium oxide thin films prepared by direct liquid injection chemical vapor deposition method
Niobium oxide thin films were grown by direct liquid injection chemical vapor deposition
using Nb (OC 2 H 5) 5 precursor. Influence of reactant's molar ratios [oxygen: Nb (OC 2 H 5) …
using Nb (OC 2 H 5) 5 precursor. Influence of reactant's molar ratios [oxygen: Nb (OC 2 H 5) …
Improving the dielectric constant of Al2O3 by cerium substitution for high-k MIM applications
R Sohal, G Lupina, O Seifarth, P Zaumseil, C Walczyk… - Surface science, 2010 - Elsevier
Process compatible high-k dielectric thin films are one of the key solutions to develop high
performance metal–insulator–metal (MIM) structures for future microelectronic devices …
performance metal–insulator–metal (MIM) structures for future microelectronic devices …
High-performance imido–amido precursor for the atomic layer deposition of Ta2O5
T Blanquart, V Longo, J Niinistö… - Semiconductor …, 2012 - iopscience.iop.org
The atomic layer deposition of Ta 2 O 5 thin films was studied using a novel imido–amido
precursor t BuN= Ta (NEt 2) 3. This precursor is liquid at room temperature, possesses good …
precursor t BuN= Ta (NEt 2) 3. This precursor is liquid at room temperature, possesses good …