Characterization of electroless-deposited ternary M1M2-R (M1= Co, Ni, M2= W, Mo, R= P, B) nano thin film for optical-sensor interconnects
Y Cui, E Choi, HJ Shim, Y Gao… - Science of Advanced …, 2017 - ingentaconnect.com
We evaluated the selective metal capping layer in a complementary metal-oxide
semiconductor image sensor using electroless-deposited CoWP and NiWP films. We …
semiconductor image sensor using electroless-deposited CoWP and NiWP films. We …
Radiofrequency characteristics of ionized sputtered tantalum nitride thin-film resistor in CMOS device
WS Sul, SH Kwon, E Choi, Y Cui, KW Lee… - Electronic Materials …, 2017 - Springer
We report the analysis of the radiofrequency (RF) characteristics according to the size, area,
and shape of TaN thin-film resistor (TFR) layers. As the TFR size increased, its …
and shape of TaN thin-film resistor (TFR) layers. As the TFR size increased, its …
Interfacial Reaction Characteristics of Au Stud/Sn/Cu Pillar Bump During Annealing and Current Stressing
JB Kim, BR Lee, SH Kim, JM Park… - Journal of Nanoscience …, 2015 - ingentaconnect.com
In this work, intermetallic compound (IMC) growth behavior in Au stud/Sn/Cu pillar bumps
was investigated under annealing and current stressing conditions. AuSn2 and AuSn4 IMCs …
was investigated under annealing and current stressing conditions. AuSn2 and AuSn4 IMCs …