New approaches and understandings in the growth of cubic silicon carbide
In this review paper, several new approaches about the 3C-SiC growth are been presented.
In fact, despite the long research activity on 3C-SiC, no devices with good electrical …
In fact, despite the long research activity on 3C-SiC, no devices with good electrical …
Novel photonic applications of silicon carbide
Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique
photonic properties facilitated by the advances of nanotechnologies such as nanofabrication …
photonic properties facilitated by the advances of nanotechnologies such as nanofabrication …
Boosting of morphological, structural and optical characteristics of SiC-NiO inorganic nanomaterials merged organic polymer for optoelectronics applications
In the current work, promising nanocomposites films were manufactured from polystyrene
(PS) filled by silicon carbide (SiC)-nickel oxide (NiO) nanomaterials to be suitable in many …
(PS) filled by silicon carbide (SiC)-nickel oxide (NiO) nanomaterials to be suitable in many …
Silicon carbide thin film technologies: recent advances in processing, properties, and applications-Part I
AE Kaloyeros, B Arkles - ECS Journal of Solid State Science and …, 2023 - iopscience.iop.org
In Part I of a two-part report, we provide a detailed and systematic review of the latest
progress in cutting-edge innovations for the silicon carbide (SiC) material system, focusing …
progress in cutting-edge innovations for the silicon carbide (SiC) material system, focusing …
Tailoring the position of the inserted Al2O3 insulating layer in the relaxor PLZT films for high-performance energy-storage applications
MD Nguyen, HD Tong, HN Vu - Journal of the European Ceramic Society, 2023 - Elsevier
Abstract Thin-amorphous Al 2 O 3 (AO) insulating layers inserted into the SrRuO 3-top-
electrode/Pb 0.9 La 0.1 Zr 0.52 Ti 0.48 O 3 (PL)/SrRuO 3-bottom-electrode/Si structures …
electrode/Pb 0.9 La 0.1 Zr 0.52 Ti 0.48 O 3 (PL)/SrRuO 3-bottom-electrode/Si structures …
Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC
M Kollmuss, F La Via… - Crystal Research and …, 2023 - Wiley Online Library
A systematic approach to determine the most crucial growth parameters and their effect on
the surface morphology and defect density of sublimation grown (001) cubic silicon carbide …
the surface morphology and defect density of sublimation grown (001) cubic silicon carbide …
Advanced approach of bulk (111) 3C-SiC epitaxial growth
Abstract 3C-SiC films grown on (111) Si substrates exhibit poor crystal quality and
experience wafer cracks and bowing preventing access to bulk growth. This work reports …
experience wafer cracks and bowing preventing access to bulk growth. This work reports …
3C-SiC growth on inverted silicon pyramids patterned substrate
This work reports on the properties of cubic silicon carbide (3C-SiC) grown epitaxially on a
patterned silicon substrate composed of squared inverted silicon pyramids (ISP). This …
patterned silicon substrate composed of squared inverted silicon pyramids (ISP). This …
Large area growth of cubic silicon carbide using close space PVT by application of homoepitaxial seeding
M Kollmuss, M Schöler, R Anzalone… - Materials Science …, 2022 - Trans Tech Publ
One setback that hinders the breakthrough of cubic silicon carbide is the lack of suitable
seeding material for sublimation growth methods such as PVT. We present the growth of …
seeding material for sublimation growth methods such as PVT. We present the growth of …
A study on free-standing 3C-SiC bipolar power diodes
A low p–n built-in potential (1.75 V) makes 3C-SiC an attractive choice for medium voltage
bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and …
bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and …