[HTML][HTML] Group III selenides: Controlling dimensionality, structure, and properties through defects and heteroepitaxial growth
MA Olmstead, FS Ohuchi - Journal of Vacuum Science & Technology A, 2021 - pubs.aip.org
This Review describes behaviors and mechanisms governing heteroepitaxial nucleation
and growth of group III (Al, Ga, and In)–selenium (Se) based semiconductors by molecular …
and growth of group III (Al, Ga, and In)–selenium (Se) based semiconductors by molecular …
Characterization of linear and nonlinear optical properties of NaBi (WO4) 2 crystal by spectroscopic ellipsometry
M Isik, I Guler, NM Gasanly - Optical Materials, 2024 - Elsevier
Abstract NaBi (WO 4) 2 compound has been a material of considerable attention in
optoelectronic applications. The present research, in which we examined the linear and …
optoelectronic applications. The present research, in which we examined the linear and …
Investigation of structural and optical characteristics of thermally evaporated Ga2Se3 thin films
M Isik, NM Gasanly - Vacuum, 2020 - Elsevier
Ga 2 Se 3 thin films were prepared by thermal evaporation technique and structural, optical
characteristics of the deposited thin films were investigated in the present study. X-ray …
characteristics of the deposited thin films were investigated in the present study. X-ray …
Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 Up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments
A series of investigations on the structural, vibrational, and electrical transport
characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic …
characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic …
Characterization of thin films of Ga2Se3 on Si fabricated using electron beam evaporation technique
M Bhatnagar, S Jha, S Kumar - Energy Storage, 2023 - Wiley Online Library
Many studies have been conducted in the past on compound semiconductor and wide‐gap
semiconductor for their possible usage in place of oxide in metal‐oxide‐semiconductor …
semiconductor for their possible usage in place of oxide in metal‐oxide‐semiconductor …
Study of vibrational modes in (Ga2S3) x−(Ga2Se3) 1-x mixed crystals by Raman and infrared reflection measurements
M Isik, I Guler, NM Gasanly - Optical Materials, 2019 - Elsevier
Raman and infrared (IR) reflection characteristics were investigated in the frequency region
of 100–450 cm− 1 for (Ga 2 S 3) x−(Ga 2 Se 3) 1-x mixed crystals for compositions of x …
of 100–450 cm− 1 for (Ga 2 S 3) x−(Ga 2 Se 3) 1-x mixed crystals for compositions of x …
Thermoluminescence characteristics of GaSe and Ga2Se3 single crystals
Abstract GaSe and Ga 2 Se 3 are semiconducting compounds formed from same constituent
elements. These compounds have been attractive due to their optoelectronic and …
elements. These compounds have been attractive due to their optoelectronic and …
[PDF][PDF] 单波长椭偏法测量各向异性晶体光学参数的研究
汪娟， 冀丽娜， 白芸， 黄佐华 - Laser & Optoelectronics Progress, 2020 - researching.cn
摘要采用单波长反射式椭偏仪以及多次旋转样品的方法, 实现了光轴平行于表面的各向异性晶体
光学参数的测量. 分析了单波长椭偏法测量各向异性晶体光学参数的原理 …
光学参数的测量. 分析了单波长椭偏法测量各向异性晶体光学参数的原理 …
Phases with layered (AB) and “defective”(A2B3) structures in AIII–BVI systems Part 1. Structural uniqueness and properties of bulk samples and films. Review
AY Zavrazhnov, NY Brezhnev, IN Nekrylov… - … sredy i mezhfaznye …, 2024 - journals.vsu.ru
The review analyses and, where possible, reconciles data on two large groups of inorganic
substances that are very unusual in terms of structure and properties, designated as AIIIBVI …
substances that are very unusual in terms of structure and properties, designated as AIIIBVI …
Structure of Ga-Sb-Se glasses by combination of 77Se NMR and neutron diffraction experiments with molecular dynamics
E Furet, A Lecomte, D Le Coq, F Zeng… - Journal of Non …, 2021 - Elsevier
This paper deals with the structural investigation of a new class of glasses belonging to the
Ga-Sb-Se system. Neutron diffraction and 77 Se NMR were performed on the Ga 8 Sb 27 Se …
Ga-Sb-Se system. Neutron diffraction and 77 Se NMR were performed on the Ga 8 Sb 27 Se …