The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently
required for novel non-volatile memory devices with low power consumption, fast read/write …

The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …

Modern microelectronic systems and applications demand an every increasing amount of
non‐volatile memories that are fast, reliable, and consume little power. Memory concepts …

HfAlO film‐based ferroelectric memory is a strong contender for the next‐generation
nonvolatile memories. However, the remanent polarization intensity of HfAlO films is small …

HfO 2-ZrO 2 superlattice (SL) ferroelectric (FE) ultrathin films exhibit significant improvement
in endurance performance compared with solid-solution Hf x Zr 1− x O 2 (HZO). Despite the …

The wake‐up phenomenon widely exists in hafnia‐based ferroelectric capacitors, which
causes device parameter variation over time. Crystallization at a higher temperature has …

The ferroelectric polarization stability and dielectric characteristics of ZrO 2-HfO 2
superlattice (SL) ferroelectric layer Metal-Ferroelectric-Metal (MFM) capacitor fabricated with …

The endurance degradation of HfO 2-based ferroelectric films limits their development
toward practical applications. In this work, we systematically investigate the ferroelectric …

HfO2–ZrO2 ferroelectric films have recently gained considerable attention from integrated
circuit researchers due to their excellent ferroelectric properties over a wide doping range …

Abstract Two-dimensional (2D) materials are at the forefront of innovation, heralding a new
era for next-generation electronics and optoelectronics. These materials are distinguished …