Effective nonlinear GaSe crystal. Optical properties and applications
KR Allakhverdiev, MÖ Yetis, S Özbek, TK Baykara… - Laser Physics, 2009 - Springer
We present an overview of the current state of the literature and research performed by the
authors of the present paper on the experimental and theoretical results on the structural …
authors of the present paper on the experimental and theoretical results on the structural …
General strategy for zero-valent intercalation into two-dimensional layered nanomaterials
We demonstrate the complete tunability of a general strategy to intercalate zero-valent
atoms into two-dimensional (2D) layered materials. A chemical method was used to …
atoms into two-dimensional (2D) layered materials. A chemical method was used to …
Growth of GaSe and GaS single crystals
KA Kokh, YM Andreev, VA Svetlichnyi… - Crystal Research …, 2011 - Wiley Online Library
The paper describes principal manipulations to prepare single crystals of GaSe and GaS. A
new simple method of synthesis with single‐zone heating furnace is proposed. Growth of …
new simple method of synthesis with single‐zone heating furnace is proposed. Growth of …
SHG phase matching in GaSe and mixed GaSe1-xSx, x≤0.412, crystals at room temperature
HZ Zhang, ZH Kang, Y Jiang, JY Gao, FG Wu… - Optics …, 2008 - opg.optica.org
The optical properties of p-type GaSe and mixed GaSe_1-xS_x, x= 0.04, 0.023, 0.090,
0.133, 0.175, 0.216, 0.256, 0.362, 0.369, and 0.412, crystals were studied to reveal the …
0.133, 0.175, 0.216, 0.256, 0.362, 0.369, and 0.412, crystals were studied to reveal the …
Preparation, Chemical Composition, and Optical Properties of (β–Ga2O3 Composite Thin Films)/(GaSxSe1−x Lamellar Solid Solutions) Nanostructures
GaSxSe1− x solid solutions are layered semiconductors with a band gap between 2.0 and
2.6 eV. Their single crystals are formed by planar packings of S/Se-Ga-Ga-S/Se type, with …
2.6 eV. Their single crystals are formed by planar packings of S/Se-Ga-Ga-S/Se type, with …
Composition-tuned band gap energy and refractive index in GaSxSe1− x layered mixed crystals
Transmission and reflection measurements on GaS x Se 1− x mixed crystals (0≤ x≤ 1)
were carried out in the 400–1000 nm spectral range. Band gap energies of the studied …
were carried out in the 400–1000 nm spectral range. Band gap energies of the studied …
GaS0.4Se0.6: Relevant properties and potential for 1064 nm pumped mid-IR OPOs and OPGs operating above 5 μm
We present measurements of the transparency, refractive index dispersion, nonlinear
coefficient, damage threshold, and two-photon absorption of mixed GaS x Se 1− x crystals …
coefficient, damage threshold, and two-photon absorption of mixed GaS x Se 1− x crystals …
Picosecond mid-infrared optical parametric amplifier based on the wide-bandgap GaS0.4Se0.6 pumped by a Nd:YAG laser system at 1064 nm
Picosecond mid-infrared optical parametric amplifier based on the wide-bandgap GaS0.4Se0.6
pumped by a Nd:YAG laser system at 1064 nm clickable element to expand a topic LOGIN OR …
pumped by a Nd:YAG laser system at 1064 nm clickable element to expand a topic LOGIN OR …
Growth and microstructure of heterogeneous crystal GaSe: InS
VV Atuchin, NF Beisel, KA Kokh, VN Kruchinin… - …, 2013 - pubs.rsc.org
An optical quality GaSe: InS single crystal has been grown by modified Bridgman technique
using nonstationary temperature distribution for effective melt mixing. The phase …
using nonstationary temperature distribution for effective melt mixing. The phase …
Transient reflectivity measurement of photocarrier dynamics in GaSe thin films
X Zhang, S Wang, G Wan, Y Zhang, M Huang, L Yi - Applied Physics B, 2017 - Springer
We report a spatially, temporally, and spectrally resolved transient reflectivity measurement
on photocarrier lifetime and diffusion in GaSe. We directly obtain a carrier lifetime of about …
on photocarrier lifetime and diffusion in GaSe. We directly obtain a carrier lifetime of about …