Modeling and optimization of CuIn1-xGaxSe2/Si1-yGey structure for solar cells applications
A combination of a Copper Indium Gallium Selenide (CIGS) and Silicon (Si) layer has been
recognized as an excellent choice for producing heterojunction based solar cells with …
recognized as an excellent choice for producing heterojunction based solar cells with …
Analysis of Losses Associated with Series Resistance (Rs) in Simple-Structured c-Si Solar Cells
MJ Heredia-Rios, L Hernandez-Martinez… - Energies, 2024 - mdpi.com
The assessment of photovoltaic devices, which convert light energy into electricity, has
become significantly more relevant due to the aspiration to reduce pollution on a global …
become significantly more relevant due to the aspiration to reduce pollution on a global …
Investigation of 1.9 μm GINA Simulated as Intrinsic Layer in a GaAs Homojunction: From 25% Towards 32.4% Conversion Yield
Based on a PC1D (Personal Computer One-Dimensional) simulator device, we have
investigated three solar prototypes of gallium arsenide structures labeled as SP I, SP II and …
investigated three solar prototypes of gallium arsenide structures labeled as SP I, SP II and …
[PDF][PDF] GaAs yarıiletken yüzeyinde mikro yarıkların üretilmesi ve FLIM tekniği ile yüzey karakterizasyonu
S AÇIKGÖZ, H Yungevis - Niğde Ömer Halisdemir Üniversitesi …, 2022 - dergipark.org.tr
Paralel micro grooves were successfully fabricated on p-type gallium arsenide (GaAs)
substrate by double cell electrochemical etching method under various growth conditions …
substrate by double cell electrochemical etching method under various growth conditions …