Lattice strain and defects analysis in nanostructured semiconductor materials and devices by high‐resolution X‐ray diffraction: Theoretical and practical aspects
The reliability of semiconductor materials with electrical and optical properties are
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …
Rise of silicene: A competitive 2D material
Silicene, a silicon analogue of graphene, has attracted increasing attention during the past
few years. As early as in 1994, the possibility of stage corrugation in the Si analogs of …
few years. As early as in 1994, the possibility of stage corrugation in the Si analogs of …
Advancement and challenges in MOSFET scaling
RK Ratnesh, A Goel, G Kaushik, H Garg… - Materials Science in …, 2021 - Elsevier
In this study, we enlighten about the field effect transistors (FET) and their technologies. As
far as very large integration is concerned, researchers are continuously focusing on scaling …
far as very large integration is concerned, researchers are continuously focusing on scaling …
[HTML][HTML] Recent advances in silicon nanowire biosensors: synthesis methods, properties, and applications
P Namdari, H Daraee, A Eatemadi - Nanoscale research letters, 2016 - Springer
The application of silicon nanowire (SiNW) biosensor as a subtle, label-free, and electrical
tool has been extensively demonstrated by several researchers over the past few decades …
tool has been extensively demonstrated by several researchers over the past few decades …
Lithium insertion in silicon nanowires: an ab initio study
The ultrahigh specific lithium ion storage capacity of Si nanowires (SiNWs) has been
demonstrated recently and has opened up exciting opportunities for energy storage …
demonstrated recently and has opened up exciting opportunities for energy storage …
[HTML][HTML] Functional devices from bottom-up Silicon nanowires: A review
This paper summarizes some of the essential aspects for the fabrication of functional
devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting …
devices from bottom-up silicon nanowires. In a first part, the different ways of exploiting …
[HTML][HTML] A review on electronic and optical properties of silicon nanowire and its different growth techniques
Electronic and optical properties of Silicon Nanowire (SiNW) obtained from theoretical
studies and experimental approaches have been reviewed. The diameter dependency of …
studies and experimental approaches have been reviewed. The diameter dependency of …
Understanding quantum confinement in nanowires: basics, applications and possible laws
NS Mohammad - Journal of Physics: Condensed Matter, 2014 - iopscience.iop.org
A comprehensive investigation of quantum confinement in nanowires has been carried out.
Though applied to silicon nanowires (SiNWs), it is general and applicable to all nanowires …
Though applied to silicon nanowires (SiNWs), it is general and applicable to all nanowires …
Silicon nanowire growth and properties: a review
J Ramanujam, D Shiri, A Verma - Materials Express, 2011 - ingentaconnect.com
Over the last few years silicon nanowires have come under intensive research due to their
promising physical properties and potential as active materials in future electronic and …
promising physical properties and potential as active materials in future electronic and …
Full three-dimensional quantum transport simulation of atomistic interface roughness in silicon nanowire FETs
The influence of interface roughness scattering (IRS) on the performances of silicon
nanowire (NW) field-effect transistors is numerically investigated using a full 3-D quantum …
nanowire (NW) field-effect transistors is numerically investigated using a full 3-D quantum …