Confinement in small structures has required quantum mechanics, which has been known
for a great many years. This leads to quantum transport. The field-effect transistor has had …

This book is designed to give a background on the origins and development of Wigner
functions, as well as its mathematical underpinnings. Along the way the authors emphasise …

In this paper, electrical characteristics of small nanowire fin field-effect transistor (FinFET)
are investigated by using a three-dimensional quantum correction simulation. Taking …

In this paper, we present the main issues and the modelling approaches for the simulation of
nanoscale MOSFETs in which transport is dominated by ballistic electrons. We show that is …

In this book, the problem of electron and hole transport is approached from the point of view
that a coherent and consistent physical theory can be constructed for transport phenomena …

An approach is developed for the determination of the current flowing through a nanosize
silicon-on-insulator metal-oxide-semiconductor field-effect transistors. The quantum …

One of the most promising new device structures, scalable to dimensions below 10 nm, is
the double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) studied …

Silicon-based nanowire field effect transistors (FETs) are potentially next-generation
candidates for achieving high-performance targets of the International Roadmap for …

In this paper, electrical characteristics of sub-10 nm nanowire FinFETs are investigated
using a three-dimensional (3D) quantum correction simulation. Two different nanowire …

A simplified quantum mechanical model is developed to investigate quantum transport
features such as the electron concentration and the current flowing through a silicon …