The Controlling Mechanism for Potential Loss in CH3NH3PbBr3 Hybrid Solar Cells

X Zheng, B Chen, M Yang, C Wu, B Orler… - ACS Energy …, 2016 - ACS Publications
We investigated moisture and thermal stability of MAPbBr3 perovskite material. Cubic
MAPbBr3 was found to be moisture-insensitive and can avoid the thermal stability issues …

An insight into optical beam induced current microscopy: Concepts and applications

GY Zhuo, S Banik, FJ Kao, GA Ahmed… - Microscopy …, 2022 - Wiley Online Library
Laser scanning optical beam induced current (OBIC) microscopy has become a powerful
and nondestructive alternative to other complicated methods like electron beam induced …

A carrier density dependent diffusion coefficient, recombination rate and diffusion length in MAPbI 3 and MAPbBr 3 crystals measured under one-and two-photon …

P Ščajev, S Miasojedovas, S Juršėnas - Journal of Materials Chemistry …, 2020 - pubs.rsc.org
Applications of lead halide perovskites in solar cells and photo-and ionising radiation
detectors are based on effective charge carrier generation and transport. The perovskites …

Analysis of carrier lifetime in a drift layer of 1.2-kV class 4H–SiC devices toward complete suppression of bipolar degradation

T Mii, H Sakane, S Harada, M Kato - Materials Science in Semiconductor …, 2023 - Elsevier
We analyzed the carrier lifetime in a drift layer of 1.2 kV-class SiC pn diodes to suppress
bipolar degradation. According to the device simulation results, the required carrier lifetime …

[HTML][HTML] Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques

P Ščajev, S Miasojedovas, A Mekys… - Journal of Applied …, 2018 - pubs.aip.org
We applied time-resolved pump-probe spectroscopy based on free carrier absorption and
light diffraction on a transient grating for direct measurements of the carrier lifetime and …

[HTML][HTML] Analysis of carrier recombination coefficients of 3C-and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC

K Tanaka, M Kato - AIP Advances, 2023 - pubs.aip.org
In recent years, 4H-SiC power devices have been widely employed in power electronic
systems owing to their superior performance to Si power devices. However, stacking faults in …

Epitaxial growth and characterization of 4H-SiC for neutron detection applications

A Meli, A Muoio, A Trotta, L Meda, M Parisi, F La Via - Materials, 2021 - mdpi.com
The purpose of this work is to study the 4H-SiC epitaxial layer properties for the fabrication of
a device for neutron detection as an alternative material to diamond detectors used in this …

[HTML][HTML] Surface recombination velocities for 4H–SiC: Dependence of excited carrier concentration and surface passivation

M Kato, A Ogawa, L Han, T Kato - Materials Science in Semiconductor …, 2024 - Elsevier
Carrier lifetime plays a crucial role in optimizing the performance and reliability of SiC
devices. Surface recombination is one of the factors affecting carrier lifetime. However, the …

4H-SiC Auger recombination coefficient under the high injection condition

K Tanaka, K Nagaya, M Kato - Japanese Journal of Applied …, 2023 - iopscience.iop.org
The on-resistance of bipolar devices depends on the carrier lifetime, which is determined by
Shockley–Read–Hall, surface, radiation, and Auger recombination processes. Values for the …

Surface recombination velocities for 4H-SiC: Temperature dependence and difference in conductivity type at several crystal faces

M Kato, Z Xinchi, K Kohama, S Fukaya… - Journal of Applied …, 2020 - pubs.aip.org
In bipolar SiC devices, which are promising under ultra-high voltage operation, the carrier
lifetime is a highly influential parameter for the device performance. Surface recombination …