Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently
required for novel non-volatile memory devices with low power consumption, fast read/write …

Thin films based on stoichiometric hafnium zirconate doped and co-doped with La, Gd,
and/or Y have been grown by atomic layer deposition on TiN electrodes. The resulting TiN …

High endurance of 10 11 cycles is demonstrated in~ 9–10-nm stoichiometric Hafnium
Zirconate (HZO) metal–ferroelectric–metal (MFM) capacitors deposited using Cl precursors …

Resistive random access memories (RRAMs) using two-dimensional (2D) materials have
delivered comparable switching performance with CMOS devices. However, devices risk …

The discovery of ferroelectricity in HfO2 thin film, which is compatible with the CMOS
process, has revived interest in ferroelectric memory devices. HfO2 has been found to …

To promote the practical application of ferroelectric devices, we present a systematical study
on ferroelectric properties of 10nm HZO capacitor at the high temperature application …

16-kb 1T-1C ferroelectric random access memory (FeRAM) arrays are demonstrated for 130-
nm node technology with TiN/HfO 2: Si/TiN ferroelectric capacitors integrated into the back …

We have reported that film thickness scaling of ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) allows
hafnium-based one-transistor and one-capacitor (1T1C) ferroelectric random-access …

Recently, transistor scaling is approaching its physical limit, hindering the further
development of the computing capability. In the post-Moore era, emerging logic and storage …