Abstract Plasma Enhanced Chemical Vapor Deposition (PECVD) has been used for direct
production of wafer-equivalent quality silicon thin film solar cells, includes the nc-Si: H …

This study presents a novel approach for achieving a high deposition rate of nanocrystalline
hydrogenated silicon (nc-Si: H) thin films using dusty plasma, eliminating the need for …

Amorphous silicon (a-Si) is a promising material with a high refractive index that shows great
potential in the development of low-thermal-noise, highly reflective coatings for gravitational …

ABSTRACT The Plasma-Enhanced Chemical Vapor Deposition (PECVD) method is widely
used compared to other methods to deposit hydrogenated silicon Si: H. In this work, a …

The nature of the hydrogen bonds and their influence on film (micro/nano) structure has
been investigated as a function of substrate temperature TS (200–500° C) in hydrogenated …

We report high-quality hydrogenated nanocrystalline silicon (nc-Si: H) thin films were
prepared by facing targets sputtering (FTS) in the environment of Ar and H 2 mixture gases …

Utilizing plasma-assisted deposition by combining an RF magnetron and an inductively
coupled plasma (ICP) source it is possible to fabricate highly crystallized nc-Si: H films at a …

Using argon as a diluent of Silane, hydrogenated amorphous and nanorocrystalline silicon
films Si: H were prepared by radio-frequency (13.56 MHz) plasma enhanced chemical vapor …

In this paper, well dispersed Si nanospheres (Si-NSs) were successfully synthesized via a
simple and efficient method by using radio-frequency (RF) thermal plasma treatment …

Low-temperature depositions of Si films from hydrogenated amorphous silicon (a-Si: H) to
highly crystallized hydrogenated microcrystalline silicon (µc-Si: H) were realized by the low …