Results from current studies of the parameters of deep centers in 6 H-, 4 H-, and 3 C-SiC are
analyzed. Data are presented on the ionization energy and capture cross sections of centers …

The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field
effect transistor (MOSFET) is a promising architecture for the development of efficient GaN …

We have studied intrinsic and impurity related defects in silicon carbide (SiC) epilayers
grown with fast epitaxy using chemical vapor deposition in a vertical hot-wall reactor. Using …

The reverse leakage mechanism of threading dislocation (TD)-free gallium nitride (GaN)
vertical pn diode was investigated in various temperature range, and it was compared with …

We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs)
based on (In, Ga) N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si …

Epitaxial 4H–SiC layers were grown by chemical vapor deposition (CVD) on porous silicon
carbide. Porous SiC substrates were fabricated by the formation of a 2 to 15 μm thick porous …

This work investigates p+ n− n GaN-on-Si vertical structures, through dedicated
measurements and TCAD simulations, with the ultimate goal of identifying possible …

The identity and characteristics of the lifetime limiting defects in n‐type 4H‐SiC epitaxial
layers are of particular current interest, due to the suitability of this material for high‐power …

Анализируются полученные к настоящему времени результаты по исследованию
параметров глубоких центров в 6H-4H-и 3C-SiC. Приведены данные по энергиям …

Planar n–p and p–n junction diodes, fabricated in 4H-SiC epitaxial layers using a double-
implantation technology a deep-range acceptor followed by a shallow-range donor …