This work presents a novel method to introduce a sustainable biaxial tensile strain larger
than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman …

We provide a theoretical analysis of the relative merits of tensile strain and n-type doping as
approaches to realizing an efficient low-power germanium laser. Ultimately, tensile strain …

The controlled application of strain in crystalline semiconductors can be used to modify their
basic physical properties to enhance performance in electronic and photonic device …

In this paper, we discuss the validity of the band structure concept in silicon nanocrystals a
few nanometers in size. We introduce a general method which allows reconstruction of a …

Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge
cannot emit light efficiently. However, the direct band gap energy is close to the indirect one …

Silicon, a semiconductor underpinning the vast majority of microelectronics, is an indirect‐
gap material and consequently is an inefficient light emitter. This hampers the ongoing …

Finding a Si-based material with strong optical activity at the band-edge remains a
challenge despite decades of research. The interest lies in combining optical and electronic …

To address the yet open question regarding the nature of quantum confinement in Ge
nanocrystals (Ge NCs) we employed scanning tunneling spectroscopy to monitor the …

The formation of mesoporous Ge layers with different morphologies by bipolar
electrochemical etching is reported for the first time. A detailed analysis of the effect of …

Mesoporous germanium (Ge) is a new nanostructured material with a very high potential for
numerous applications. Thermally induced structural evolution of this nanomaterial is a key …