Metalorganic compounds are finding an increasing application in the growth of III–V and II–
VI semiconductor layers by metalorganic vapour phase epitaxy (MOVPE) and chemical …

Microelectronics plays a major role in a host of late twentieth century technologies.
Everywhere you look, microprocessors seem to be present. Taking the venerable …

Au-catalyzed GaAs nanowires were grown on Si substrates by vapor-liquid-solid growth
method using a molecular beam epitaxy (MBE). The MBE growth could produce controlled …

This review discusses new developments in our attempts to understand the fundamental
aspects of organometallic vapor phase epitaxy (OMVPE), a process now widely used in the …

We report low-temperature Hall-effect and photoluminescence measurements on samples of
GaSb lightly doped with carbon in the range of 10 16–5× 10 17 cm− 3. Temperature …

Homoepitaxial GaAs layers were grown by low-pressure metalorganic vapor phase epitaxy
(MOVPE), by using the metalorganic precursors trimethylgallium (TMGa) and the low …

The metastable wurtzite crystal phase in gallium phosphide (WZ GaP) is a relatively new
structure with little available information about its emission properties compared to the most …

During the development of organometallic vapor phase epitaxy (OMVPE) for the growth of
III/V semiconductor materials, the choice of group III and group V source molecules has …

We present in-situ mass spectroscopy studies of surface reactions of dimethylaminoarsine
and tertiarybutylarsine under metalorganic molecular beam epitaxy conditions. The results …

The carbon doping properties of GaAs grown by low pressure (30 Torr) organometallic
vapor phase epitaxy at 520–700° C with CCl4 as the dopant precursor were compared for …