Positive flatband voltage shift in phosphorus doped SiO2/N-type 4H-SiC MOS capacitors under high field electron injection
MI Idris, MH Weng, A Peters, RJ Siddall… - Journal of Physics D …, 2019 - iopscience.iop.org
The effect of phosphorus inclusion on different bias stress at high electric field on
phosphorus doped SiO 2 is investigated by electrical measurements of SiC MOS capacitors …
phosphorus doped SiO 2 is investigated by electrical measurements of SiC MOS capacitors …
Silicon Carbide Technology: State-of-the-Art
V Švárna, M Frivaldský - 2024 ELEKTRO (ELEKTRO), 2024 - ieeexplore.ieee.org
This article provides an overview of the most recent developments in silicon carbide
research. It provides a brief history of silicon carbide and an overview of devices that use …
research. It provides a brief history of silicon carbide and an overview of devices that use …
MOSFETs under short circuit conditions for aeronautical applications
L Robinson, R Xu, S Simdyankin… - 2021 56th …, 2021 - ieeexplore.ieee.org
The short circuit performance of silicon carbide MOSFETs has been evaluated in a 270 V
system designed to mimic the characteristics of a commercial airliner power system. The …
system designed to mimic the characteristics of a commercial airliner power system. The …