[HTML][HTML] Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime
Point defects in silicon carbide (SiC) can act as charge carrier traps and have a pronounced
impact on material properties such as the mobility and carrier lifetime. Prominent among …
impact on material properties such as the mobility and carrier lifetime. Prominent among …
Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature
A Frazzetto, F Giannazzo, RL Nigro… - Journal of Physics D …, 2011 - iopscience.iop.org
In this paper, the transport properties of alloyed Ti/Al Ohmic contacts formed on p-type Al-
implanted silicon carbide (4H-SiC) were studied. The morphology of p-type implanted 4H …
implanted silicon carbide (4H-SiC) were studied. The morphology of p-type implanted 4H …
High performance power module
MK Das, RJ Callanan, H Lin, JW Palmour - US Patent 9,640,617, 2017 - Google Patents
Int. Cl. The present disclosure relates to a power module that has a HOIL 29/6(2006.01)
housing with an interior chamber and a plurality of Switch HOIL 27/06(2006.01) modules …
housing with an interior chamber and a plurality of Switch HOIL 27/06(2006.01) modules …
Microwave annealing of Mg-implanted and in situ Be-doped GaN
An ultrafast microwave annealing method, different from conventional thermal annealing, is
used to activate Mg-implants in GaN layer. The x-ray diffraction measurements indicated …
used to activate Mg-implants in GaN layer. The x-ray diffraction measurements indicated …
Double guard ring edge termination for silicon carbide devices
Q Zhang, C Jonas, AK Agarwal - US Patent 9,640,609, 2017 - Google Patents
USPC........................... 257/77, 127,483 484, 620 ga plurality of spaced apart concentric
floating guard rings in a semiconductor layer that at least partially surround a semiconductor …
floating guard rings in a semiconductor layer that at least partially surround a semiconductor …
Microwave annealing of very high dose aluminum-implanted 4H-SiC
A microwave heating technique has been used for the electrical activation of Al+ ions
implanted in semi-insulating 4H-SiC. Annealing temperatures in the range of 2000–2100 C …
implanted in semi-insulating 4H-SiC. Annealing temperatures in the range of 2000–2100 C …
High current, low switching loss SiC power module
MK Das, H Lin, M Schupbach, JW Palmour - US Patent 9,373,617, 2016 - Google Patents
US9373617B2 - High current, low switching loss SiC power module - Google Patents
US9373617B2 - High current, low switching loss SiC power module - Google Patents High current …
US9373617B2 - High current, low switching loss SiC power module - Google Patents High current …
[HTML][HTML] Formation and stability of point defect color centers in 6H silicon carbide
E Lemva Ousdal, M Etzelmüller Bathen… - Journal of Applied …, 2024 - pubs.aip.org
Point defect color centers acting as single-photon emitters are promising for quantum
technology applications and have been extensively studied, eg, in the 4H polytype of silicon …
technology applications and have been extensively studied, eg, in the 4H polytype of silicon …
Schottky diode employing recesses for elements of junction barrier array
(*) Notice: Subject to any disclaimer, the term of this S. 53-6 A. i8 patent is extended or
adjusted under 35 USC 154 (b) by 0 days.(Continued) This patent is Subject to a terminal …
adjusted under 35 USC 154 (b) by 0 days.(Continued) This patent is Subject to a terminal …