A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …

Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …

The resistivity size effect in Ir is quantified with in situ and ex situ transport measurements at
295 and 77 K using epitaxial layers with thickness d= 5–140 nm deposited on MgO (001) …

Benzohydroxamic acid (BHA) was evaluated for the first time as a corrosion inhibitor for
cobalt (Co) films polishing for interconnect application. The inhibition mechanism of the BHA …

Achieving cobalt superconformal (bottom-up) growth is significantly important.
Electrochemical methods, including cyclic voltammetry, electrochemical impedance spectra …

We apply first-principles simulations to evaluate several properties related to the resistance
and reliability of rhodium and iridium interconnects. We find that both Rh and Ir have …

As the semiconductor industry turns to alternative conductors to replace Cu for future
interconnect nodes, much attention has been focused on evaluating the electrical …

The rapid development and broad utilization of nuclear technologies has raised safety
concerns, especially for those requiring radiation‐shielding equipment. To cope with such …

In situ transport measurements on epitaxial metal layers (Cu, Co, Ru, Rh, Ir) in combination
with first-principles simulations are used to evaluate the resistivity scaling and determine the …

We use first-principles calculations to investigate the structural and transport properties of
various Cu/Ta (N)/Cu interface stacks, which are representative of the metal interfaces …